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Items: 21

1.

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy.

Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang W, Hinkle CL, Wallace RM.

ACS Appl Mater Interfaces. 2017 Nov 8;9(44):38977-38983. doi: 10.1021/acsami.7b10974. Epub 2017 Oct 25.

PMID:
29035026
2.

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

Zhao P, Azcatl A, Gomeniuk YY, Bolshakov P, Schmidt M, McDonnell SJ, Hinkle CL, Hurley PK, Wallace RM, Young CD.

ACS Appl Mater Interfaces. 2017 Jul 19;9(28):24348-24356. doi: 10.1021/acsami.7b06204. Epub 2017 Jul 6.

PMID:
28650155
3.

Superacid Passivation of Crystalline Silicon Surfaces.

Bullock J, Kiriya D, Grant N, Azcatl A, Hettick M, Kho T, Phang P, Sio HC, Yan D, Macdonald D, Quevedo-Lopez MA, Wallace RM, Cuevas A, Javey A.

ACS Appl Mater Interfaces. 2016 Sep 14;8(36):24205-11. doi: 10.1021/acsami.6b07822. Epub 2016 Aug 31.

PMID:
27553365
4.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM.

Nano Lett. 2016 Sep 14;16(9):5437-43. doi: 10.1021/acs.nanolett.6b01853. Epub 2016 Aug 9.

PMID:
27494551
5.

Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

Zhu H, Qin X, Cheng L, Azcatl A, Kim J, Wallace RM.

ACS Appl Mater Interfaces. 2016 Jul 27;8(29):19119-26. doi: 10.1021/acsami.6b04719. Epub 2016 Jul 14.

PMID:
27386734
6.

Correction to Manganese Doping of Monolayer MoS2: The Substrate Is Critical.

Zhang K, Feng S, Wang J, Azcatl A, Lu N, Addou R, Wang N, Zhou C, Lerach J, Bojan V, Kim MJ, Chen LQ, Wallace RM, Terrones M, Zhu J, Robinson JA.

Nano Lett. 2016 Mar 9;16(3):2125. doi: 10.1021/acs.nanolett.6b00760. Epub 2016 Feb 24. No abstract available.

PMID:
26905941
7.

Partially Fluorinated Graphene: Structural and Electrical Characterization.

Cheng L, Jandhyala S, Mordi G, Lucero AT, Huang J, Azcatl A, Addou R, Wallace RM, Colombo L, Kim J.

ACS Appl Mater Interfaces. 2016 Feb;8(7):5002-8. doi: 10.1021/acsami.5b11701. Epub 2016 Feb 10.

PMID:
26820099
8.

Near-unity photoluminescence quantum yield in MoS₂.

Amani M, Lien DH, Kiriya D, Xiao J, Azcatl A, Noh J, Madhvapathy SR, Addou R, KC S, Dubey M, Cho K, Wallace RM, Lee SC, He JH, Ager JW 3rd, Zhang X, Yablonovitch E, Javey A.

Science. 2015 Nov 27;350(6264):1065-8. doi: 10.1126/science.aad2114.

9.

Manganese Doping of Monolayer MoS2: The Substrate Is Critical.

Zhang K, Feng S, Wang J, Azcatl A, Lu N, Addou R, Wang N, Zhou C, Lerach J, Bojan V, Kim MJ, Chen LQ, Wallace RM, Terrones M, Zhu J, Robinson JA.

Nano Lett. 2015 Oct 14;15(10):6586-91. doi: 10.1021/acs.nanolett.5b02315. Epub 2015 Sep 11. Erratum in: Nano Lett. 2016 Mar 9;16(3):2125.

PMID:
26349430
10.

Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces.

Addou R, McDonnell S, Barrera D, Guo Z, Azcatl A, Wang J, Zhu H, Hinkle CL, Quevedo-Lopez M, Alshareef HN, Colombo L, Hsu JW, Wallace RM.

ACS Nano. 2015 Sep 22;9(9):9124-33. doi: 10.1021/acsnano.5b03309. Epub 2015 Aug 27.

PMID:
26301428
11.

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.

Zhu H, McDonnell S, Qin X, Azcatl A, Cheng L, Addou R, Kim J, Ye PD, Wallace RM.

ACS Appl Mater Interfaces. 2015 Jun 17;7(23):13038-43. doi: 10.1021/acsami.5b03192. Epub 2015 Jun 8.

PMID:
26016806
12.

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.

Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, Redwing JM, Robinson JA.

ACS Nano. 2015 Feb 24;9(2):2080-7. doi: 10.1021/nn5073286. Epub 2015 Feb 2.

PMID:
25625184
13.

Seeding atomic layer deposition of alumina on graphene with yttria.

Dahal A, Addou R, Azcatl A, Coy-Diaz H, Lu N, Peng X, de Dios F, Kim J, Kim MJ, Wallace RM, Batzill M.

ACS Appl Mater Interfaces. 2015 Jan 28;7(3):2082-7. doi: 10.1021/am508154n. Epub 2015 Jan 15.

PMID:
25556522
14.

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy.

Yue R, Barton AT, Zhu H, Azcatl A, Pena LF, Wang J, Peng X, Lu N, Cheng L, Addou R, McDonnell S, Colombo L, Hsu JW, Kim J, Kim MJ, Wallace RM, Hinkle CL.

ACS Nano. 2015 Jan 27;9(1):474-80. doi: 10.1021/nn5056496. Epub 2014 Dec 22.

PMID:
25496648
15.

Air stable p-doping of WSe2 by covalent functionalization.

Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu YS, Hettick M, Kang JS, McDonnell S, Santosh KC, Guo J, Cho K, Wallace RM, Javey A.

ACS Nano. 2014 Oct 28;8(10):10808-14. doi: 10.1021/nn5047844. Epub 2014 Sep 22.

PMID:
25229426
16.

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.

Cheng L, Qin X, Lucero AT, Azcatl A, Huang J, Wallace RM, Cho K, Kim J.

ACS Appl Mater Interfaces. 2014 Aug 13;6(15):11834-8. doi: 10.1021/am5032105. Epub 2014 Jul 21.

17.

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments.

McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM.

ACS Nano. 2014 Jun 24;8(6):6265-72. doi: 10.1021/nn501728w. Epub 2014 May 9.

PMID:
24797712
18.

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

Chuang S, Battaglia C, Azcatl A, McDonnell S, Kang JS, Yin X, Tosun M, Kapadia R, Fang H, Wallace RM, Javey A.

Nano Lett. 2014 Mar 12;14(3):1337-42. doi: 10.1021/nl4043505. Epub 2014 Feb 27.

PMID:
24568656
19.

Hole selective MoOx contact for silicon solar cells.

Battaglia C, Yin X, Zheng M, Sharp ID, Chen T, McDonnell S, Azcatl A, Carraro C, Ma B, Maboudian R, Wallace RM, Javey A.

Nano Lett. 2014 Feb 12;14(2):967-71. doi: 10.1021/nl404389u. Epub 2014 Jan 27.

PMID:
24397343
20.

Realistic metal-graphene contact structures.

Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM.

ACS Nano. 2014 Jan 28;8(1):642-9. doi: 10.1021/nn405249n. Epub 2013 Nov 26.

PMID:
24261695
21.

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

McDonnell S, Brennan B, Azcatl A, Lu N, Dong H, Buie C, Kim J, Hinkle CL, Kim MJ, Wallace RM.

ACS Nano. 2013 Nov 26;7(11):10354-61. doi: 10.1021/nn404775u. Epub 2013 Oct 17.

PMID:
24116949

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