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Items: 1 to 50 of 57

1.

Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials.

Cai H, Chen B, Blei M, Chang SLY, Wu K, Zhuang H, Tongay S.

Nat Commun. 2018 May 15;9(1):1927. doi: 10.1038/s41467-018-04328-z.

2.

Novel Surface Molecular Functionalization Route To Enhance Environmental Stability of Tellurium-Containing 2D Layers.

Yang S, Qin Y, Chen B, Özçelik VO, White CE, Shen Y, Yang S, Tongay S.

ACS Appl Mater Interfaces. 2017 Dec 27;9(51):44625-44631. doi: 10.1021/acsami.7b14873. Epub 2017 Dec 13.

PMID:
29192495
3.

Dynamic Optical Tuning of Interlayer Interactions in the Transition Metal Dichalcogenides.

Mannebach EM, Nyby C, Ernst F, Zhou Y, Tolsma J, Li Y, Sher MJ, Tung IC, Zhou H, Zhang Q, Seyler KL, Clark G, Lin Y, Zhu D, Glownia JM, Kozina ME, Song S, Nelson S, Mehta A, Yu Y, Pant A, Aslan OB, Raja A, Guo Y, DiChiara A, Mao W, Cao L, Tongay S, Sun J, Singh DJ, Heinz TF, Xu X, MacDonald AH, Reed E, Wen H, Lindenberg AM.

Nano Lett. 2017 Dec 13;17(12):7761-7766. doi: 10.1021/acs.nanolett.7b03955. Epub 2017 Nov 15.

PMID:
29119791
4.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}.

Yao K, Yan A, Kahn S, Suslu A, Liang Y, Barnard ES, Tongay S, Zettl A, Borys NJ, Schuck PJ.

Phys Rev Lett. 2017 Aug 25;119(8):087401. doi: 10.1103/PhysRevLett.119.087401. Epub 2017 Aug 25.

PMID:
28952768
5.

Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition.

Yang S, Cai H, Chen B, Ko C, Özçelik VO, Ogletree DF, White CE, Shen Y, Tongay S.

Nanoscale. 2017 Aug 31;9(34):12288-12294. doi: 10.1039/c7nr02397a.

PMID:
28809419
6.

Observation of ultralong valley lifetime in WSe2/MoS2 heterostructures.

Kim J, Jin C, Chen B, Cai H, Zhao T, Lee P, Kahn S, Watanabe K, Taniguchi T, Tongay S, Crommie MF, Wang F.

Sci Adv. 2017 Jul 26;3(7):e1700518. doi: 10.1126/sciadv.1700518. eCollection 2017 Jul.

7.

Few-layer MoS2 as nitrogen protective barrier.

Akbali B, Yanilmaz A, Tomak A, Tongay S, Çelebi C, Sahin H.

Nanotechnology. 2017 Oct 13;28(41):415706. doi: 10.1088/1361-6528/aa825e. Epub 2017 Jul 26.

PMID:
28745618
8.

Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions.

Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y, Tongay S.

Adv Mater. 2017 Sep;29(34). doi: 10.1002/adma.201701201. Epub 2017 Jul 10.

PMID:
28692772
9.

Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting.

Ci P, Chen Y, Kang J, Suzuki R, Choe HS, Suh J, Ko C, Park T, Shen K, Iwasa Y, Tongay S, Ager JW 3rd, Wang LW, Wu J.

Nano Lett. 2017 Aug 9;17(8):4982-4988. doi: 10.1021/acs.nanolett.7b02159. Epub 2017 Jul 3.

PMID:
28657751
10.

Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets.

Kong W, Bacaksiz C, Chen B, Wu K, Blei M, Fan X, Shen Y, Sahin H, Wright D, Narang DS, Tongay S.

Nanoscale. 2017 Mar 23;9(12):4175-4182. doi: 10.1039/c7nr00711f.

PMID:
28282099
11.

Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide.

Borys NJ, Barnard ES, Gao S, Yao K, Bao W, Buyanin A, Zhang Y, Tongay S, Ko C, Suh J, Weber-Bargioni A, Wu J, Yang L, Schuck PJ.

ACS Nano. 2017 Feb 28;11(2):2115-2123. doi: 10.1021/acsnano.6b08278. Epub 2017 Feb 1.

PMID:
28117983
12.

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.

Cai H, Chen B, Wang G, Soignard E, Khosravi A, Manca M, Marie X, Chang SL, Urbaszek B, Tongay S.

Adv Mater. 2017 Feb;29(8). doi: 10.1002/adma.201605551. Epub 2016 Dec 19.

PMID:
27990702
13.

Strong dichroic emission in the pseudo one dimensional material ZrS3.

Pant A, Torun E, Chen B, Bhat S, Fan X, Wu K, Wright DP, Peeters FM, Soignard E, Sahin H, Tongay S.

Nanoscale. 2016 Sep 15;8(36):16259-16265.

PMID:
27714055
14.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

Wang C, Yang S, Xiong W, Xia C, Cai H, Chen B, Wang X, Zhang X, Wei Z, Tongay S, Li J, Liu Q.

Phys Chem Chem Phys. 2016 Oct 12;18(40):27750-27753.

PMID:
27711489
15.

Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3.

Wu K, Torun E, Sahin H, Chen B, Fan X, Pant A, Parsons Wright D, Aoki T, Peeters FM, Soignard E, Tongay S.

Nat Commun. 2016 Sep 22;7:12952. doi: 10.1038/ncomms12952.

16.

Microscale Silicon Origami.

Song Z, Lv C, Liang M, Sanphuang V, Wu K, Chen B, Zhao Z, Bai J, Wang X, Volakis JL, Wang L, He X, Yao Y, Tongay S, Jiang H.

Small. 2016 Oct;12(39):5401-5406. doi: 10.1002/smll.201601947. Epub 2016 Aug 23.

PMID:
27552191
17.

Domain Architectures and Grain Boundaries in Chemical Vapor Deposited Highly Anisotropic ReS2 Monolayer Films.

Wu K, Chen B, Yang S, Wang G, Kong W, Cai H, Aoki T, Soignard E, Marie X, Yano A, Suslu A, Urbaszek B, Tongay S.

Nano Lett. 2016 Sep 14;16(9):5888-94. doi: 10.1021/acs.nanolett.6b02766. Epub 2016 Aug 8.

PMID:
27489946
18.

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates.

Hou J, Wang X, Fu D, Ko C, Chen Y, Sun Y, Lee S, Wang KX, Dong K, Sun Y, Tongay S, Jiao L, Yao J, Liu K, Wu J.

Small. 2016 Aug;12(29):3976-84. doi: 10.1002/smll.201601021. Epub 2016 Jun 23.

PMID:
27335137
19.

Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides.

Cai H, Soignard E, Ataca C, Chen B, Ko C, Aoki T, Pant A, Meng X, Yang S, Grossman J, Ogletree FD, Tongay S.

Adv Mater. 2016 Sep;28(34):7375-82. doi: 10.1002/adma.201601184. Epub 2016 Jun 6.

PMID:
27271214
20.

Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions.

Dybała F, Polak MP, Kopaczek J, Scharoch P, Wu K, Tongay S, Kudrawiec R.

Sci Rep. 2016 May 24;6:26663. doi: 10.1038/srep26663.

21.

Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.

Fonseca JJ, Tongay S, Topsakal M, Chew AR, Lin AJ, Ko C, Luce AV, Salleo A, Wu J, Dubon OD.

Adv Mater. 2016 Aug;28(30):6465-70. doi: 10.1002/adma.201601151. Epub 2016 May 12.

PMID:
27171481
22.

Enhancing light emission efficiency without color change in post-transition metal chalcogenides.

Wang C, Yang S, Cai H, Ataca C, Chen H, Zhang X, Xu J, Chen B, Wu K, Zhang H, Liu L, Li J, Grossman JC, Tongay S, Liu Q.

Nanoscale. 2016 Mar 21;8(11):5820-5. doi: 10.1039/c5nr08692b. Epub 2016 Feb 29.

PMID:
26928022
23.

Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory.

Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson JD, Choe HS, Tongay S, Ramesh R, Wu J.

Adv Mater. 2016 Apr 20;28(15):2923-30. doi: 10.1002/adma.201504779. Epub 2016 Feb 19.

PMID:
26894866
24.

Unusual dimensionality effects and surface charge density in 2D Mg(OH)2.

Suslu A, Wu K, Sahin H, Chen B, Yang S, Cai H, Aoki T, Horzum S, Kang J, Peeters FM, Tongay S.

Sci Rep. 2016 Feb 5;6:20525. doi: 10.1038/srep20525.

25.

Fundamentals of lateral and vertical heterojunctions of atomically thin materials.

Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S.

Nanoscale. 2016 Feb 21;8(7):3870-87. doi: 10.1039/c5nr08982d. Review.

PMID:
26831401
26.

Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure.

Yang S, Wang C, Ataca C, Li Y, Chen H, Cai H, Suslu A, Grossman JC, Jiang C, Liu Q, Tongay S.

ACS Appl Mater Interfaces. 2016 Feb 3;8(4):2533-9. doi: 10.1021/acsami.5b10001. Epub 2016 Jan 21.

PMID:
26796869
27.

Exciton pumping across type-I gallium chalcogenide heterojunctions.

Cai H, Kang J, Sahin H, Chen B, Suslu A, Wu K, Peeters F, Meng X, Tongay S.

Nanotechnology. 2016 Feb 12;27(6):065203. doi: 10.1088/0957-4484/27/6/065203. Epub 2016 Jan 13.

PMID:
26759069
28.

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers.

Wang G, Robert C, Suslu A, Chen B, Yang S, Alamdari S, Gerber IC, Amand T, Marie X, Tongay S, Urbaszek B.

Nat Commun. 2015 Dec 14;6:10110. doi: 10.1038/ncomms10110.

29.

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.

Kim E, Ko C, Kim K, Chen Y, Suh J, Ryu SG, Wu K, Meng X, Suslu A, Tongay S, Wu J, Grigoropoulos CP.

Adv Mater. 2016 Jan 13;28(2):341-6. doi: 10.1002/adma.201503945. Epub 2015 Nov 16.

PMID:
26567761
30.

Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K.

Lee S, Yang F, Suh J, Yang S, Lee Y, Li G, Sung Choe H, Suslu A, Chen Y, Ko C, Park J, Liu K, Li J, Hippalgaonkar K, Urban JJ, Tongay S, Wu J.

Nat Commun. 2015 Oct 16;6:8573. doi: 10.1038/ncomms9573.

31.

Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene.

Liu K, Hsin CL, Fu D, Suh J, Tongay S, Chen M, Sun Y, Yan A, Park J, Yu KM, Guo W, Zettl A, Zheng H, Chrzan DC, Wu J.

Adv Mater. 2015 Nov 18;27(43):6841-7. doi: 10.1002/adma.201501752. Epub 2015 Oct 5.

PMID:
26437308
32.

Engineering excitonic dynamics and environmental stability of post-transition metal chalcogenides by pyridine functionalization technique.

Meng X, Pant A, Cai H, Kang J, Sahin H, Chen B, Wu K, Yang S, Suslu A, Peeters FM, Tongay S.

Nanoscale. 2015 Oct 28;7(40):17109-15. doi: 10.1039/c5nr04879f.

PMID:
26419224
33.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films.

Kocer H, Butun S, Palacios E, Liu Z, Tongay S, Fu D, Wang K, Wu J, Aydin K.

Sci Rep. 2015 Aug 21;5:13384. doi: 10.1038/srep13384.

34.

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide.

Bao W, Borys NJ, Ko C, Suh J, Fan W, Thron A, Zhang Y, Buyanin A, Zhang J, Cabrini S, Ashby PD, Weber-Bargioni A, Tongay S, Aloni S, Ogletree DF, Wu J, Salmeron MB, Schuck PJ.

Nat Commun. 2015 Aug 13;6:7993. doi: 10.1038/ncomms8993.

35.

MoS2 Heterojunctions by Thickness Modulation.

Tosun M, Fu D, Desai SB, Ko C, Kang JS, Lien DH, Najmzadeh M, Tongay S, Wu J, Javey A.

Sci Rep. 2015 Jun 30;5:10990. doi: 10.1038/srep10990.

36.

Magnetoresistance oscillations in topological insulator Bi2Te3 nanoscale antidot arrays.

Song M, Chu JH, Zhou J, Tongay S, Liu K, Suh J, Chen H, Seuk Kang J, Zou X, You L.

Nanotechnology. 2015 Jul 3;26(26):265301. doi: 10.1088/0957-4484/26/26/265301. Epub 2015 Jun 10.

PMID:
26059087
37.

Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction.

Chen B, Sahin H, Suslu A, Ding L, Bertoni MI, Peeters FM, Tongay S.

ACS Nano. 2015 May 26;9(5):5326-32. doi: 10.1021/acsnano.5b00985. Epub 2015 Apr 15.

PMID:
25868985
38.

Enhanced light emission from large-area monolayer MoS₂ using plasmonic nanodisc arrays.

Butun S, Tongay S, Aydin K.

Nano Lett. 2015 Apr 8;15(4):2700-4. doi: 10.1021/acs.nanolett.5b00407. Epub 2015 Mar 5.

PMID:
25729895
39.

Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

Yang S, Wang C, Sahin H, Chen H, Li Y, Li SS, Suslu A, Peeters FM, Liu Q, Li J, Tongay S.

Nano Lett. 2015 Mar 11;15(3):1660-6. doi: 10.1021/nl504276u. Epub 2015 Feb 3.

PMID:
25642738
40.

Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

Suh J, Park TE, Lin DY, Fu D, Park J, Jung HJ, Chen Y, Ko C, Jang C, Sun Y, Sinclair R, Chang J, Tongay S, Wu J.

Nano Lett. 2014 Dec 10;14(12):6976-82. doi: 10.1021/nl503251h. Epub 2014 Dec 1.

PMID:
25420217
41.

Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures.

Hong X, Kim J, Shi SF, Zhang Y, Jin C, Sun Y, Tongay S, Wu J, Zhang Y, Wang F.

Nat Nanotechnol. 2014 Sep;9(9):682-6. doi: 10.1038/nnano.2014.167. Epub 2014 Aug 24.

PMID:
25150718
42.

Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures.

Liu K, Yan Q, Chen M, Fan W, Sun Y, Suh J, Fu D, Lee S, Zhou J, Tongay S, Ji J, Neaton JB, Wu J.

Nano Lett. 2014 Sep 10;14(9):5097-103. doi: 10.1021/nl501793a. Epub 2014 Aug 19.

PMID:
25120033
43.

High-performance few-layer Mo-doped ReSe₂ nanosheet photodetectors.

Yang S, Tongay S, Yue Q, Li Y, Li B, Lu F.

Sci Rep. 2014 Jun 25;4:5442. doi: 10.1038/srep05442.

44.

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors.

Yang S, Tongay S, Li Y, Yue Q, Xia JB, Li SS, Li J, Wei SH.

Nanoscale. 2014 Jul 7;6(13):7226-31. doi: 10.1039/c4nr01741b.

PMID:
24882603
45.

Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers.

Tongay S, Fan W, Kang J, Park J, Koldemir U, Suh J, Narang DS, Liu K, Ji J, Li J, Sinclair R, Wu J.

Nano Lett. 2014 Jun 11;14(6):3185-90. doi: 10.1021/nl500515q. Epub 2014 May 27.

PMID:
24845201
46.

Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling.

Tongay S, Sahin H, Ko C, Luce A, Fan W, Liu K, Zhou J, Huang YS, Ho CH, Yan J, Ogletree DF, Aloni S, Ji J, Li S, Li J, Peeters FM, Wu J.

Nat Commun. 2014;5:3252. doi: 10.1038/ncomms4252.

PMID:
24500082
47.

Scalable enhancement of graphene oxide properties by thermally driven phase transformation.

Kumar PV, Bardhan NM, Tongay S, Wu J, Belcher AM, Grossman JC.

Nat Chem. 2014 Feb;6(2):151-8. doi: 10.1038/nchem.1820. Epub 2013 Dec 15.

PMID:
24451592
48.

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons.

Tongay S, Suh J, Ataca C, Fan W, Luce A, Kang JS, Liu J, Ko C, Raghunathanan R, Zhou J, Ogletree F, Li J, Grossman JC, Wu J.

Sci Rep. 2013;3:2657. doi: 10.1038/srep02657.

49.

Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

Tongay S, Zhou J, Ataca C, Liu J, Kang JS, Matthews TS, You L, Li J, Grossman JC, Wu J.

Nano Lett. 2013 Jun 12;13(6):2831-6. doi: 10.1021/nl4011172. Epub 2013 May 1.

PMID:
23627637
50.

Strain-induced suppression of weak localization in CVD-grown graphene.

Miao X, Tongay S, Hebard AF.

J Phys Condens Matter. 2012 Nov 28;24(47):475304. doi: 10.1088/0953-8984/24/47/475304. Epub 2012 Nov 2.

PMID:
23123808

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