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Items: 1 to 20 of 212

1.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Chen SH, Liao WS, Yang HC, Wang SJ, Liaw YG, Wang H, Gu H, Wang MC.

Nanoscale Res Lett. 2012 Aug 1;7(1):431. doi: 10.1186/1556-276X-7-431.

2.

Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation.

Lee SC, Neumann A, Jiang YB, Artyushkova K, Brueck SR.

Nanotechnology. 2016 Sep 16;27(37):375707. doi: 10.1088/0957-4484/27/37/375707. Epub 2016 Aug 9.

PMID:
27504931
3.

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor.

Shi M, Saint-Martin J, Bournel A, Querlioz D, Dollfus P, Mo J, Wichmann N, Desplanque L, Wallart X, Danneville F, Bollaert S.

J Nanosci Nanotechnol. 2013 Feb;13(2):771-5.

PMID:
23646513
4.

Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor.

Takase K, Ashikawa Y, Zhang G, Tateno K, Sasaki S.

Sci Rep. 2017 Apr 19;7(1):930. doi: 10.1038/s41598-017-01080-0.

5.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon.

Rigante S, Scarbolo P, Wipf M, Stoop RL, Bedner K, Buitrago E, Bazigos A, Bouvet D, Calame M, Schönenberger C, Ionescu AM.

ACS Nano. 2015 May 26;9(5):4872-81. doi: 10.1021/nn5064216. Epub 2015 Apr 24.

PMID:
25817336
6.

Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.

Yang WF, Lee SJ, Liang GC, Whang SJ, Kwong DL.

Nanotechnology. 2008 Jun 4;19(22):225203. doi: 10.1088/0957-4484/19/22/225203. Epub 2008 Apr 25.

PMID:
21825755
7.

High performance horizontal gate-all-around silicon nanowire field-effect transistors.

Shirak O, Shtempluck O, Kotchtakov V, Bahir G, Yaish YE.

Nanotechnology. 2012 Oct 5;23(39):395202. doi: 10.1088/0957-4484/23/39/395202. Epub 2012 Sep 12.

PMID:
22971804
8.

Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

Lee W, Su P.

Nanotechnology. 2009 Feb 11;20(6):065202. doi: 10.1088/0957-4484/20/6/065202. Epub 2009 Jan 14.

PMID:
19417374
9.
10.

Nonplanar Nanoscale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing.

Rojas JP, Torres Sevilla GA, Alfaraj N, Ghoneim MT, Kutbee AT, Sridharan A, Hussain MM.

ACS Nano. 2015 May 26;9(5):5255-63. doi: 10.1021/acsnano.5b00686. Epub 2015 May 5.

PMID:
25933370
11.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

Choi WY, Lee HK.

Nano Converg. 2016;3(1):13. doi: 10.1186/s40580-016-0073-y. Epub 2016 Jun 15.

12.

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.

Matsumoto T, Kato H, Oyama K, Makino T, Ogura M, Takeuchi D, Inokuma T, Tokuda N, Yamasaki S.

Sci Rep. 2016 Aug 22;6:31585. doi: 10.1038/srep31585.

13.

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

Xiong Y, Chen X, Wei F, Du J, Zhao H, Tang Z, Tang B, Wang W, Yan J.

Nanoscale Res Lett. 2016 Dec;11(1):533. Epub 2016 Nov 30.

14.

Design and fabrication of high-performance diamond triple-gate field-effect transistors.

Liu J, Ohsato H, Wang X, Liao M, Koide Y.

Sci Rep. 2016 Oct 6;6:34757. doi: 10.1038/srep34757.

15.
16.

Optimal design of an electret microphone metal-oxide-semiconductor field-effect transistor preamplifier.

van der Donk AG, Bergveld P.

J Acoust Soc Am. 1992 Apr;91(4 Pt 1):2261-9.

PMID:
1597614
17.
18.

Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.

Min SW, Lee HS, Choi HJ, Park MK, Nam T, Kim H, Ryu S, Im S.

Nanoscale. 2013 Jan 21;5(2):548-51. doi: 10.1039/c2nr33443g. Epub 2012 Dec 12.

PMID:
23233087
19.

Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor.

Lee DG, Sindhuri V, Jo YW, Son DH, Kang HS, Lee JH, Lee JH, Cristoloveanu S, Im KS, Lee JH.

J Nanosci Nanotechnol. 2016 May;16(5):5049-52.

PMID:
27483869
20.

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

Chen FH, Her JL, Shao YH, Matsuda YH, Pan TM.

Nanoscale Res Lett. 2013 Jan 8;8(1):18. doi: 10.1186/1556-276X-8-18.

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