Format
Sort by
Items per page

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 110

1.

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Dalapati GK, Shun Wong TK, Li Y, Chia CK, Das A, Mahata C, Gao H, Chattopadhyay S, Kumar MK, Seng HL, Maiti CK, Chi DZ.

Nanoscale Res Lett. 2012 Feb 2;7(1):99. doi: 10.1186/1556-276X-7-99.

2.

Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

Dalapati GK, Chia CK, Tan CC, Tan HR, Chiam SY, Dong JR, Das A, Chattopadhyay S, Mahata C, Maiti CK, Chi DZ.

ACS Appl Mater Interfaces. 2013 Feb;5(3):949-57. doi: 10.1021/am302537b. Epub 2013 Jan 31.

PMID:
23331503
3.

Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.

Mukherjee C, Das T, Mahata C, Maiti CK, Chia CK, Chiam SY, Chi DZ, Dalapati GK.

ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3263-74. doi: 10.1021/am405019d. Epub 2014 Feb 24.

PMID:
24472090
4.

Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.

Kang YS, Kim DK, Jeong KS, Cho MH, Kim CY, Chung KB, Kim H, Kim DC.

ACS Appl Mater Interfaces. 2013 Mar;5(6):1982-9. doi: 10.1021/am302803f. Epub 2013 Mar 8.

PMID:
23438318
5.

Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.

He G, Gao J, Chen H, Cui J, Sun Z, Chen X.

ACS Appl Mater Interfaces. 2014 Dec 24;6(24):22013-25. doi: 10.1021/am506351u. Epub 2014 Dec 15.

PMID:
25471009
6.

Atomic Layer Deposition of p-Type Epitaxial Thin Films of Undoped and N-Doped Anatase TiO2.

Vasu K, Sreedhara MB, Ghatak J, Rao CN.

ACS Appl Mater Interfaces. 2016 Mar;8(12):7897-901. doi: 10.1021/acsami.6b00628. Epub 2016 Mar 18.

PMID:
26963716
7.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

Choi YJ, Lim H, Lee S, Suh S, Kim JR, Jung HS, Park S, Lee JH, Kim SG, Hwang CS, Kim H.

ACS Appl Mater Interfaces. 2014 May 28;6(10):7885-94. doi: 10.1021/am5012172. Epub 2014 Apr 29.

PMID:
24780393
8.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

Gutsche C, Lysov A, Regolin I, Blekker K, Prost W, Tegude FJ.

Nanoscale Res Lett. 2011 Dec;6(1):65. doi: 10.1007/s11671-010-9815-7. Epub 2010 Oct 7.

9.

Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

Khan ZN, Ahmed S, Ali M.

PLoS One. 2016 Aug 29;11(8):e0161736. doi: 10.1371/journal.pone.0161736. eCollection 2016.

10.

Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.

Wang X, Liu HX, Fei CX, Yin SY, Fan XJ.

Nanoscale Res Lett. 2015 Mar 19;10:141. doi: 10.1186/s11671-015-0842-2. eCollection 2015.

11.

Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density.

Wang X, Dong L, Zhang J, Liu Y, Ye PD, Gordon RG.

Nano Lett. 2013 Feb 13;13(2):594-9. doi: 10.1021/nl3041349. Epub 2013 Jan 7.

PMID:
23294262
12.

Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

Komolov AS, Akhremtchik SN, Lazneva EF.

Spectrochim Acta A Mol Biomol Spectrosc. 2011 Aug 15;79(4):708-11. doi: 10.1016/j.saa.2010.08.042. Epub 2010 Sep 21.

PMID:
20863744
13.

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC.

ACS Appl Mater Interfaces. 2015 Sep 23;7(37):20499-506. doi: 10.1021/acsami.5b06087. Epub 2015 Sep 9.

PMID:
26334784
14.

A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal-Oxide-Semiconductor Devices.

Hu C, McDaniel MD, Jiang A, Posadas A, Demkov AA, Ekerdt JG, Yu ET.

ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5416-23. doi: 10.1021/acsami.5b10661. Epub 2016 Feb 17.

PMID:
26859048
15.

Effects of gold diffusion on n-type doping of GaAs nanowires.

Tambe MJ, Ren S, Gradecak S.

Nano Lett. 2010 Nov 10;10(11):4584-9. doi: 10.1021/nl102594e. Epub 2010 Oct 12.

PMID:
20939583
16.

High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.

Wirths S, Stange D, Pampillón MA, Tiedemann AT, Mussler G, Fox A, Breuer U, Baert B, San Andrés E, Nguyen ND, Hartmann JM, Ikonic Z, Mantl S, Buca D.

ACS Appl Mater Interfaces. 2015 Jan 14;7(1):62-7. doi: 10.1021/am5075248. Epub 2014 Dec 24.

PMID:
25531887
17.

Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation.

Lee SC, Neumann A, Jiang YB, Artyushkova K, Brueck SR.

Nanotechnology. 2016 Sep 16;27(37):375707. doi: 10.1088/0957-4484/27/37/375707. Epub 2016 Aug 9.

PMID:
27504931
18.

Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

Negara MA, Kitano M, Long RD, McIntyre PC.

ACS Appl Mater Interfaces. 2016 Aug 17;8(32):21089-94. doi: 10.1021/acsami.6b03862. Epub 2016 Aug 8.

PMID:
27459343
19.

Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.

Yang WF, Lee SJ, Liang GC, Whang SJ, Kwong DL.

Nanotechnology. 2008 Jun 4;19(22):225203. doi: 10.1088/0957-4484/19/22/225203. Epub 2008 Apr 25.

PMID:
21825755
20.

Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs(1-y)Sb(y) with Tunable Antimony Composition.

Liu JS, Clavel M, Hudait MK.

ACS Appl Mater Interfaces. 2015 Dec 30;7(51):28624-31. doi: 10.1021/acsami.5b10176. Epub 2015 Dec 21.

PMID:
26642121

Supplemental Content

Support Center