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Items: 1 to 20 of 187

1.

M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices.

Koester R, Hwang JS, Salomon D, Chen X, Bougerol C, Barnes JP, Dang Dle S, Rigutti L, de Luna Bugallo A, Jacopin G, Tchernycheva M, Durand C, Eymery J.

Nano Lett. 2011 Nov 9;11(11):4839-45. doi: 10.1021/nl202686n. Epub 2011 Oct 11.

PMID:
21967509
2.

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.

Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR.

Nano Lett. 2012 Jun 13;12(6):3257-62. doi: 10.1021/nl301307a. Epub 2012 May 24.

PMID:
22587013
3.

Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

Kang ES, Ju JW, Kim JS, Ahn HK, Lee JK, Kim JH, Shin DC, Lee IH.

J Nanosci Nanotechnol. 2007 Nov;7(11):4053-6.

PMID:
18047117
4.

Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission.

Kouno T, Kishino K, Yamano K, Kikuchi A.

Opt Express. 2009 Oct 26;17(22):20440-7. doi: 10.1364/OE.17.020440.

PMID:
19997272
5.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.

ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.

PMID:
21495684
6.

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.

Messanvi A, Zhang H, Neplokh V, Julien FH, Bayle F, Foldyna M, Bougerol C, Gautier E, Babichev A, Durand C, Eymery J, Tchernycheva M.

ACS Appl Mater Interfaces. 2015 Oct 7;7(39):21898-906. doi: 10.1021/acsami.5b06473. Epub 2015 Sep 28.

PMID:
26378593
7.

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Jung BO, Bae SY, Lee S, Kim SY, Lee JY, Honda Y, Amano H.

Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22.

8.

Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

Riley JR, Padalkar S, Li Q, Lu P, Koleske DD, Wierer JJ, Wang GT, Lauhon LJ.

Nano Lett. 2013 Sep 11;13(9):4317-25. doi: 10.1021/nl4021045. Epub 2013 Aug 12.

PMID:
23919559
9.

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.

Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065.

PMID:
21263645
10.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.

Opt Express. 2011 Jul 4;19(14):12919-24. doi: 10.1364/OE.19.012919.

PMID:
21747444
11.

Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates.

Cui K, Fathololoumi S, Golam Kibria M, Botton GA, Mi Z.

Nanotechnology. 2012 Mar 2;23(8):085205. doi: 10.1088/0957-4484/23/8/085205. Epub 2012 Feb 1.

PMID:
22293649
12.

GaN nanostructure-based light emitting diodes and semiconductor lasers.

Viswanath AK.

J Nanosci Nanotechnol. 2014 Feb;14(2):1947-82. Review.

PMID:
24749467
13.

Thin-Wall GaN/InAlN Multiple Quantum Well Tubes.

Durand C, Carlin JF, Bougerol C, Gayral B, Salomon D, Barnes JP, Eymery J, Butté R, Grandjean N.

Nano Lett. 2017 May 3. doi: 10.1021/acs.nanolett.6b04852. [Epub ahead of print]

PMID:
28441498
14.

Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.

Han CB, He C, Meng XB, Wan YR, Tian YT, Zhang YJ, Li XJ.

Opt Express. 2012 Feb 27;20(5):5636-43. doi: 10.1364/OE.20.005636.

PMID:
22418371
15.

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.

Chen CY, Hsieh C, Liao CH, Chung WL, Chen HT, Cao W, Chang WM, Chen HS, Yao YF, Ting SY, Kiang YW, Yang CC, Hu X.

Opt Express. 2012 May 7;20(10):11321-35. doi: 10.1364/OE.20.011321.

PMID:
22565753
16.

Transient memory effect in the photoluminescence of InGaN single quantum wells.

Feldmeier C, Abiko M, Schwarz UT, Kawakami Y, Micheletto R.

Opt Express. 2009 Dec 7;17(25):22855-60. doi: 10.1364/OE.17.022855.

PMID:
20052211
17.

Structural and optical properties of disc-in-wire InGaN/GaN LEDs.

Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM.

Nano Lett. 2015 Mar 11;15(3):1535-9. doi: 10.1021/nl503826k. Epub 2015 Feb 11.

PMID:
25658444
18.

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Chang HM, Lai WC, Chen WS, Chang SJ.

Opt Express. 2015 Apr 6;23(7):A337-45. doi: 10.1364/OE.23.00A337.

PMID:
25968799
19.

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.

Song H, Kim JS, Kim EK, Seo YG, Hwang SM.

Nanotechnology. 2010 Apr 2;21(13):134026. doi: 10.1088/0957-4484/21/13/134026. Epub 2010 Mar 8.

PMID:
20208099
20.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040

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