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Items: 1 to 20 of 293

1.

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography.

Liu G, Zhao H, Zhang J, Park JH, Mawst LJ, Tansu N.

Nanoscale Res Lett. 2011 Apr 15;6(1):342. doi: 10.1186/1556-276X-6-342.

2.

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers.

Lv W, Wang L, Wang J, Hao Z, Luo Y.

Nanoscale Res Lett. 2012 Nov 7;7(1):617. doi: 10.1186/1556-276X-7-617.

3.

Growth and characterization of self-assembled InAs/InP quantum dot structures.

Barik S, Tan HH, Wong-Leung J, Jagadish C.

J Nanosci Nanotechnol. 2010 Mar;10(3):1525-36.

PMID:
20355541
4.

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids.

Lundskog A, Palisaitis J, Hsu CW, Eriksson M, Karlsson KF, Hultman L, Persson PO, Forsberg U, Holtz PO, Janzén E.

Nanotechnology. 2012 Aug 3;23(30):305708. doi: 10.1088/0957-4484/23/30/305708. Epub 2012 Jul 11.

PMID:
22781961
5.

Morphology and optical properties of single- and multi-layer InAs quantum dots.

Hsu CC, Hsu RQ, Wu YH.

J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S149-54. doi: 10.1093/jmicro/dfq053. Epub 2010 Jun 24.

PMID:
20576720
6.

Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

Guimard D, Ishida M, Bordel D, Li L, Nishioka M, Tanaka Y, Ekawa M, Sudo H, Yamamoto T, Kondo H, Sugawara M, Arakawa Y.

Nanotechnology. 2010 Mar 12;21(10):105604. doi: 10.1088/0957-4484/21/10/105604. Epub 2010 Feb 16.

PMID:
20160334
7.

Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.

Fang ZL, Lin DQ, Kang JY, Kong JF, Shen WZ.

Nanotechnology. 2009 Jun 10;20(23):235401. doi: 10.1088/0957-4484/20/23/235401. Epub 2009 May 18.

PMID:
19448299
8.

InGaN self-assembled quantum dots grown by metal-organic chemical vapour deposition with growth interruption.

Yao HH, Lu TC, Huang GS, Chen CY, Liang WD, Kuo HC, Wang SC.

Nanotechnology. 2006 Mar 28;17(6):1713-6. doi: 10.1088/0957-4484/17/6/028. Epub 2006 Feb 27.

PMID:
26558582
9.

Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control.

Niu L, Hao Z, Hu J, Hu Y, Wang L, Luo Y.

Nanoscale Res Lett. 2011 Dec 2;6(1):611. doi: 10.1186/1556-276X-6-611.

10.

Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.

Richter D, Hafenbrak R, Jöns KD, Schulz WM, Eichfelder M, Heldmaier M, Rossbach R, Jetter M, Michler P.

Nanotechnology. 2010 Mar 26;21(12):125606. doi: 10.1088/0957-4484/21/12/125606. Epub 2010 Mar 5.

PMID:
20203350
11.

The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.

Gerhard S, Baumann V, Höfling S, Forchel A.

Nanotechnology. 2009 Oct 28;20(43):434016. doi: 10.1088/0957-4484/20/43/434016. Epub 2009 Oct 2.

PMID:
19801768
12.

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.

Yu IS, Chang CP, Yang CP, Lin CT, Ma YR, Chen CC.

Nanoscale Res Lett. 2014 Dec 17;9(1):682. doi: 10.1186/1556-276X-9-682. eCollection 2014.

13.

Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.

Park AH, Oh TS, Seo TH, Lee SB, Lee GH, Suh EK.

J Nanosci Nanotechnol. 2014 Nov;14(11):8347-51.

PMID:
25958526
14.

InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.

Wong PS, Liang B, Huffaker DL.

J Nanosci Nanotechnol. 2010 Mar;10(3):1537-50.

PMID:
20355542
15.

A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining.

Hu FR, Kanamori Y, Ochi K, Zhao Y, Wakui M, Hane K.

Nanotechnology. 2008 Jan 23;19(3):035305. doi: 10.1088/0957-4484/19/03/035305. Epub 2007 Dec 13.

PMID:
21817568
16.

Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.

Samavati A, Othaman Z, Dabagh S, Ghoshal SK.

J Nanosci Nanotechnol. 2014 Jul;14(7):5266-71.

PMID:
24758014
17.

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

Wang Y, Hu F, Hane K.

Nanoscale Res Lett. 2011 Feb 4;6(1):117. doi: 10.1186/1556-276X-6-117.

18.

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.

Zhang J, Li S, Xiong H, Tian W, Li Y, Fang Y, Wu Z, Dai J, Xu J, Li X, Chen C.

Nanoscale Res Lett. 2014 Jul 9;9(1):341. doi: 10.1186/1556-276X-9-341. eCollection 2014.

19.

Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy.

Sun CK, Chu SW, Tai SP, Keller S, Abare A, Mishra UK, DenBaars SP.

Scanning. 2001 May-Jun;23(3):182-92.

PMID:
11405303
20.

Photoluminescence efficiency and size distribution of self assembled ge dots on porous TiO2.

Rowell NL, Lockwood DJ, Amiard G, Favre L, Ronda A, Berbezier I, Faustini M, Grosso D.

J Nanosci Nanotechnol. 2011 Oct;11(10):9190-5.

PMID:
22400322
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