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Items: 1 to 20 of 116

1.

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.

Alvi NH, Ul Hasan K, Nur O, Willander M.

Nanoscale Res Lett. 2011 Feb 10;6(1):130. doi: 10.1186/1556-276X-6-130.

2.

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

Hsu KC, Hsiao WH, Lee CT, Chen YT, Liu DS.

Materials (Basel). 2015 Nov 16;8(11):7745-7756. doi: 10.3390/ma8115417.

3.

Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes.

Park GC, Hwang SM, Lee SM, Choi JH, Song KM, Kim HY, Kim HS, Eum SJ, Jung SB, Lim JH, Joo J.

Sci Rep. 2015 May 19;5:10410. doi: 10.1038/srep10410.

4.

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode.

Sadaf JR, Israr M, Kishwar S, Nur O, Willander M.

Nanoscale Res Lett. 2010 Apr 4;5(6):957-60. doi: 10.1007/s11671-010-9588-z.

5.

Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes.

Alvi NU, Hussain S, Jensen J, Nur O, Willander M.

Nanoscale Res Lett. 2011 Dec 12;6(1):628. doi: 10.1186/1556-276X-6-628.

6.

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

Jeong S, Oh SK, Ryou JH, Ahn KS, Song KM, Kim H.

ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3761-3768. doi: 10.1021/acsami.7b15946. Epub 2018 Jan 22.

PMID:
29319292
7.

Nanointerlayer induced electroluminescence transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction.

Zhou H, Fang G, Jiang Q, Zhu Y, Liu N, Zou X, Mo X, Liu Y, Wang J, Meng X, Zhao X.

ACS Appl Mater Interfaces. 2012 May;4(5):2521-4. doi: 10.1021/am300223y. Epub 2012 May 11.

PMID:
22551404
8.

UV-free red electroluminescence from the cross-connected p-ZnO:Cu nanobushes/n-GaN light emitting diode.

Wang Y, Han Y, Han J, Zhang X, Chen Y, Wang S, Wen L, Liu N, Su J, Li L, Gao Y.

Opt Express. 2016 Feb 22;24(4):3940-9. doi: 10.1364/OE.24.003940.

PMID:
26907047
9.

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence.

Abbasi MA, Ibupoto ZH, Hussain M, Nur O, Willander M.

Nanoscale Res Lett. 2013 Jul 13;8(1):320. doi: 10.1186/1556-276X-8-320.

10.

GaN/ZnO nanorod light emitting diodes with different emission spectra.

Ng AM, Xi YY, Hsu YF, Djurisić AB, Chan WK, Gwo S, Tam HL, Cheah KW, Fong PW, Lui HF, Surya C.

Nanotechnology. 2009 Nov 4;20(44):445201. doi: 10.1088/0957-4484/20/44/445201. Epub 2009 Oct 5.

PMID:
19801783
11.

Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods.

Rout CS, Rao CN.

Nanotechnology. 2008 Jul 16;19(28):285203. doi: 10.1088/0957-4484/19/28/285203. Epub 2008 Jun 2.

PMID:
21828727
12.

Study of the Distribution of Radiative Defects and Reabsorption of the UV in ZnO Nanorods-Organic Hybrid White Light Emitting Diodes (LEDs).

Hussain I, Bano N, Hussain S, Soomro Y, Nur O, Willander M.

Materials (Basel). 2011 Jul 8;4(7):1260-1270. doi: 10.3390/ma4071260.

13.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

Du CF, Lee CH, Cheng CT, Lin KH, Sheu JK, Hsu HC.

Nanoscale Res Lett. 2014 Aug 28;9(1):446. doi: 10.1186/1556-276X-9-446. eCollection 2014.

14.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

Fang X, Wei Z, Yang Y, Chen R, Li Y, Tang J, Fang D, Jia H, Wang D, Fan J, Ma X, Yao B, Wang X.

ACS Appl Mater Interfaces. 2016 Jan 27;8(3):1661-6. doi: 10.1021/acsami.5b08961. Epub 2016 Jan 12.

PMID:
26710654
15.

Toward near-white-light electroluminescence from n-ZnO nanocrystals/n-Si isotype heterojunctions via an AZO spectral scissor.

Li Z, Lu Q, Cheng X, Mo X, Zhou Y, Tao X, Ouyang Y.

Opt Express. 2017 Aug 7;25(16):19004-19012. doi: 10.1364/OE.25.019004.

PMID:
29041090
16.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

Willander M, Nur O, Zhao QX, Yang LL, Lorenz M, Cao BQ, Zúñiga Pérez J, Czekalla C, Zimmermann G, Grundmann M, Bakin A, Behrends A, Al-Suleiman M, El-Shaer A, Che Mofor A, Postels B, Waag A, Boukos N, Travlos A, Kwack HS, Guinard J, Le Si Dang D.

Nanotechnology. 2009 Aug 19;20(33):332001. doi: 10.1088/0957-4484/20/33/332001. Epub 2009 Jul 28.

PMID:
19636090
17.

Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes.

Yao YC, Yang ZP, Hwang JM, Chuang YL, Lin CC, Haung JY, Chou CY, Sheu JK, Tsai MT, Lee YJ.

Nanoscale. 2016 Feb 28;8(8):4463-74. doi: 10.1039/c5nr08561f.

PMID:
26852753
18.

Enhancement of light extraction in GaN-based light-emitting diodes using rough beveled ZnO nanocone arrays.

Yin Z, Liu X, Wu Y, Hao X, Xu X.

Opt Express. 2012 Jan 16;20(2):1013-21. doi: 10.1364/OE.20.001013.

PMID:
22274448
19.

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

Chen JT, Lai WC, Chen CH, Yang YY, Sheu JK, Lai LW.

Opt Express. 2011 Jun 6;19(12):11873-9. doi: 10.1364/OE.19.011873.

PMID:
21716420
20.

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

Chien JF, Liao HY, Yu SF, Lin RM, Shiojiri M, Shyue JJ, Chen MJ.

ACS Appl Mater Interfaces. 2013 Jan 23;5(2):227-32. doi: 10.1021/am301799j. Epub 2012 Dec 31.

PMID:
23259506

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