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Items: 1 to 20 of 72

1.

Filtering of Defects in Semipolar (11-22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.

Kriouche N, Leroux M, Vennéguès P, Nemoz M, Nataf G, de Mierry P.

Nanoscale Res Lett. 2010 Sep 2;5(12):1878-81. doi: 10.1007/s11671-010-9724-9.

2.

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

Zhu T, Ding T, Tang F, Han Y, Ali M, Badcock T, Kappers MJ, Shields AJ, Smoukov SK, Oliver RA.

Cryst Growth Des. 2016 Feb 3;16(2):1010-1016. Epub 2015 Dec 29.

3.

Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).

Jang J, Woo S, Min D, Nam O.

J Nanosci Nanotechnol. 2015 Mar;15(3):1895-906.

PMID:
26413605
4.

Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.

Arroyo Rojas Dasilva Y, Chauvat MP, Ruterana P, Lahourcade L, Monroy E, Nataf G.

J Phys Condens Matter. 2010 Sep 8;22(35):355802. doi: 10.1088/0953-8984/22/35/355802. Epub 2010 Aug 11.

PMID:
21403298
5.

Investigation on epitaxial lateral overgrowth of InGaN/GaN multi-quantum-well nanowires.

Yin Y, Sun H, Tang X, Cao R, Chen P, Shi Y, Zhang R, Zheng Y.

J Nanosci Nanotechnol. 2013 Feb;13(2):1389-91.

PMID:
23646644
6.

A partly-contacted epitaxial lateral overgrowth method applied to GaN material.

Xiao M, Zhang J, Duan X, Shan H, Yu T, Ning J, Hao Y.

Sci Rep. 2016 Apr 1;6:23842. doi: 10.1038/srep23842.

7.

Structure investigations of nonpolar GaN layers.

Neumann W, Mogilatenko A, Wernicke T, Richter E, Weyers M, Kneissl M.

J Microsc. 2010 Mar;237(3):308-13. doi: 10.1111/j.1365-2818.2009.03249.x.

8.

Stacking fault related luminescence in GaN nanorods.

Forsberg M, Serban A, Poenaru I, Hsiao CL, Junaid M, Birch J, Pozina G.

Nanotechnology. 2015 Sep 4;26(35):355203. doi: 10.1088/0957-4484/26/35/355203. Epub 2015 Aug 12.

PMID:
26267041
9.

Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst.

Lee K, Chae S, Jang J, Min D, Kim J, Eom D, Yoo YS, Cho YH, Nam O.

Nanotechnology. 2015 Aug 21;26(33):335601. doi: 10.1088/0957-4484/26/33/335601. Epub 2015 Jul 29.

PMID:
26222432
10.

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires.

Kehagias T, Dimitrakopulos GP, Becker P, Kioseoglou J, Furtmayr F, Koukoula T, Häusler I, Chernikov A, Chatterjee S, Karakostas T, Solowan HM, Schwarz UT, Eickhoff M, Komninou P.

Nanotechnology. 2013 Nov 1;24(43):435702. doi: 10.1088/0957-4484/24/43/435702. Epub 2013 Sep 27.

PMID:
24076624
11.
12.

Defects in semipolar (1122) ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3 substrate by pulsed laser deposition.

Tian JS, Wu YH, Peng CY, Chiu KA, Shih YS, Do H, Lin PY, Ho YT, Chu YH, Chang L.

J Phys Condens Matter. 2013 Mar 27;25(12):125801. doi: 10.1088/0953-8984/25/12/125801. Epub 2013 Feb 28.

PMID:
23449009
13.

Dislocation propagation in GaN films formed by epitaxial lateral overgrowth

Sakai A, Sunakawa H, Kimura A, Usui A.

J Electron Microsc (Tokyo). 2000;49(2):323-30.

PMID:
11108055
14.

Microstructure characterization of defects in cubic silicon carbide using transmission electron microscopy.

Chayasombat B, Kimata Y, Tokunaga T, Kuroda K, Sasaki K.

Microsc Microanal. 2013 Aug;19 Suppl 5:119-22. doi: 10.1017/S1431927613012464.

PMID:
23920188
15.

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.

Liu B, Yang B, Yuan F, Liu Q, Shi D, Jiang C, Zhang J, Staedler T, Jiang X.

Nano Lett. 2015 Dec 9;15(12):7837-46. doi: 10.1021/acs.nanolett.5b02454. Epub 2015 Nov 5.

PMID:
26517395
16.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ra YH, Navamathavan R, Park JH, Lee CR.

Nano Lett. 2013 Aug 14;13(8):3506-16. doi: 10.1021/nl400906r. Epub 2013 May 28.

PMID:
23701263
17.

Unintentional doping in GaN.

Zhu T, Oliver RA.

Phys Chem Chem Phys. 2012 Jul 21;14(27):9558-73. doi: 10.1039/c2cp40998d. Epub 2012 Jun 8.

PMID:
22684337
18.

Zn-dopant dependent defect evolution in GaN nanowires.

Yang B, Liu B, Wang Y, Zhuang H, Liu Q, Yuan F, Jiang X.

Nanoscale. 2015 Oct 21;7(39):16237-45. doi: 10.1039/c5nr04771d.

PMID:
26371967
19.

Combined Effect of Carrier Localization and Polarity in InxGa1-xN/GaN Quantum Wells.

Hwang HY, Choi SB, Jeong H, Lee DS, Jho YD.

J Nanosci Nanotechnol. 2015 Aug;15(8):5933-6.

PMID:
26369174
20.

A GaN bulk crystal with improved structural quality grown by the ammonothermal method.

Hashimoto T, Wu F, Speck JS, Nakamura S.

Nat Mater. 2007 Aug;6(8):568-71. Epub 2007 Jul 1.

PMID:
17603489

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