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Items: 1 to 20 of 182

1.

Ferroelectric field effect transistors for memory applications.

Hoffman J, Pan X, Reiner JW, Walker FJ, Han JP, Ahn CH, Ma TP.

Adv Mater. 2010 Jul 20;22(26-27):2957-61. doi: 10.1002/adma.200904327.

PMID:
20379995
2.

Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.

Yang CF, Chen KH, Chen YC, Chang TC.

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Sep;54(9):1726-30.

PMID:
17941379
3.

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory.

Lue HT, Wu CJ, Tseng TY.

IEEE Trans Ultrason Ferroelectr Freq Control. 2003 Jan;50(1):5-14.

PMID:
12578132
4.

Organic non-volatile memories from ferroelectric phase-separated blends.

Asadi K, de Leeuw DM, de Boer B, Blom PW.

Nat Mater. 2008 Jul;7(7):547-50. doi: 10.1038/nmat2207. Epub 2008 Jun 15.

PMID:
18552851
5.

Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes.

Fu WY, Xu Z, Liu L, Bai XD, Wang EG.

Nanotechnology. 2009 Nov 25;20(47):475305. doi: 10.1088/0957-4484/20/47/475305. Epub 2009 Oct 29.

PMID:
19875879
6.

Nanoscale ferroelectric field-effect writing and reading using scanning tunnelling spectroscopy.

Kuffer O, Maggio-Aprile I, Fischer Ø.

Nat Mater. 2005 May;4(5):378-82. Epub 2005 Apr 17.

PMID:
15834416
7.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

Du W, Inokawa H, Satoh H, Ono A.

Opt Lett. 2011 Aug 1;36(15):2800-2. doi: 10.1364/OL.36.002800.

PMID:
21808317
8.

Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

Fu W, Xu Z, Bai X, Gu C, Wang E.

Nano Lett. 2009 Mar;9(3):921-5. doi: 10.1021/nl801656w.

PMID:
19206218
9.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers.

Stolichnov I, Riester SW, Mikheev E, Setter N, Rushforth AW, Edmonds KW, Campion RP, Foxon CT, Gallagher BL, Jungwirth T, Trodahl HJ.

Nanotechnology. 2011 Jun 24;22(25):254004. doi: 10.1088/0957-4484/22/25/254004. Epub 2011 May 16.

PMID:
21572188
10.

Polarization-switching D/A converter.

Sun S, Kalkur TS.

IEEE Trans Ultrason Ferroelectr Freq Control. 2005 May;52(5):837-43.

PMID:
16048185
11.

Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.

Liao L, Fan HJ, Yan B, Zhang Z, Chen LL, Li BS, Xing GZ, Shen ZX, Wu T, Sun XW, Wang J, Yu T.

ACS Nano. 2009 Mar 24;3(3):700-6. doi: 10.1021/nn800808s.

PMID:
19249845
12.

Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.

Hoffman J, Hong X, Ahn CH.

Nanotechnology. 2011 Jun 24;22(25):254014. doi: 10.1088/0957-4484/22/25/254014. Epub 2011 May 16.

PMID:
21572192
13.

Transparent metal oxide nanowire transistors.

Chen D, Liu Z, Liang B, Wang X, Shen G.

Nanoscale. 2012 May 21;4(10):3001-12. doi: 10.1039/c2nr30445g. Epub 2012 Apr 12. Review.

PMID:
22495655
14.

FeTRAM. An organic ferroelectric material based novel random access memory cell.

Das S, Appenzeller J.

Nano Lett. 2011 Sep 14;11(9):4003-7. doi: 10.1021/nl2023993. Epub 2011 Aug 23.

PMID:
21859101
15.

Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

Fabiano S, Crispin X, Berggren M.

ACS Appl Mater Interfaces. 2014 Jan 8;6(1):438-42. doi: 10.1021/am404494h. Epub 2013 Nov 22.

PMID:
24251907
16.

The effect of nonideal polar monolayers on molecular gated transistors.

Shaya O, Amit I, Rosenwaks Y.

ACS Appl Mater Interfaces. 2010 Aug;2(8):2289-92. doi: 10.1021/am1003415.

PMID:
20735099
17.
18.

Organic nonvolatile memory devices based on ferroelectricity.

Naber RC, Asadi K, Blom PW, de Leeuw DM, de Boer B.

Adv Mater. 2010 Mar 5;22(9):933-45. doi: 10.1002/adma.200900759. Review.

PMID:
20217816
19.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

Van NH, Lee JH, Whang D, Kang DJ.

Nanoscale. 2015 Jul 21;7(27):11660-6. doi: 10.1039/c5nr02019k. Epub 2015 Jun 22.

PMID:
26098677
20.

PLL jitter reduction by utilizing a ferroelectric capacitor as a VCO timing element.

Pauls G, Kalkur TS.

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Jun;54(6):1096-102.

PMID:
17571808

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