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Items: 1 to 20 of 115

1.

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects.

Assefa S, Xia F, Vlasov YA.

Nature. 2010 Mar 4;464(7285):80-4. doi: 10.1038/nature08813.

PMID:
20203606
2.

Germanium avalanche receiver for low power interconnects.

Virot L, Crozat P, Fédéli JM, Hartmann JM, Marris-Morini D, Cassan E, Boeuf F, Vivien L.

Nat Commun. 2014 Sep 18;5:4957. doi: 10.1038/ncomms5957.

PMID:
25232823
3.

Breaking the buildup-time limit of sensitivity in avalanche photodiodes by dynamic biasing.

Hayat MM, Zarkesh-Ha P, El-Howayek G, Efroymson R, Campbell JC.

Opt Express. 2015 Sep 7;23(18):24035-41. doi: 10.1364/OE.23.024035.

PMID:
26368495
4.

Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance.

Yang F, Cong H, Yu K, Zhou L, Wang N, Liu Z, Li C, Wang Q, Cheng B.

ACS Appl Mater Interfaces. 2017 Apr 19;9(15):13422-13429. doi: 10.1021/acsami.6b16511. Epub 2017 Apr 6.

PMID:
28361534
5.

Resonant germanium nanoantenna photodetectors.

Cao L, Park JS, Fan P, Clemens B, Brongersma ML.

Nano Lett. 2010 Apr 14;10(4):1229-33. doi: 10.1021/nl9037278.

PMID:
20230043
6.

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.

Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC.

Opt Express. 2009 Jul 20;17(15):12641-9.

PMID:
19654668
7.

Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators.

Park S, Tsuchizawa T, Watanabe T, Shinojima H, Nishi H, Yamada K, Ishikawa Y, Wada K, Itabashi S.

Opt Express. 2010 Apr 12;18(8):8412-21. doi: 10.1364/OE.18.008412.

PMID:
20588687
8.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

Kim G, Park JW, Kim IG, Kim S, Kim S, Lee JM, Park GS, Joo J, Jang KS, Oh JH, Kim SA, Kim JH, Lee JY, Park JM, Kim DW, Jeong DK, Hwang MS, Kim JK, Park KS, Chi HK, Kim HC, Kim DW, Cho MH.

Opt Express. 2011 Dec 19;19(27):26936-47. doi: 10.1364/OE.19.026936.

PMID:
22274277
9.

Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.

Petykiewicz J, Nam D, Sukhdeo DS, Gupta S, Buckley S, Piggott AY, Vučković J, Saraswat KC.

Nano Lett. 2016 Apr 13;16(4):2168-73. doi: 10.1021/acs.nanolett.5b03976. Epub 2016 Mar 2.

PMID:
26907359
10.

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

Youn JS, Lee MJ, Park KY, Rücker H, Choi WY.

Opt Express. 2012 Dec 17;20(27):28153-62. doi: 10.1364/OE.20.028153.

PMID:
23263050
11.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon.

Ko WS, Bhattacharya I, Tran TD, Ng KW, Adair Gerke S, Chang-Hasnain C.

Sci Rep. 2016 Sep 23;6:33368. doi: 10.1038/srep33368.

12.

Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes.

Farrell AC, Senanayake P, Hung CH, El-Howayek G, Rajagopal A, Currie M, Hayat MM, Huffaker DL.

Sci Rep. 2015 Dec 2;5:17580. doi: 10.1038/srep17580.

13.

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector.

Chen HT, Verbist J, Verheyen P, De Heyn P, Lepage G, De Coster J, Absil P, Yin X, Bauwelinck J, Van Campenhout J, Roelkens G.

Opt Express. 2015 Jan 26;23(2):815-22. doi: 10.1364/OE.23.000815.

PMID:
25835841
14.

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide.

Feng D, Liao S, Liang H, Fong J, Bijlani B, Shafiiha R, Luff BJ, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2012 Sep 24;20(20):22224-32. doi: 10.1364/OE.20.022224.

PMID:
23037370
15.

310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection.

Duan N, Liow TY, Lim AE, Ding L, Lo GQ.

Opt Express. 2012 May 7;20(10):11031-6. doi: 10.1364/OE.20.011031.

PMID:
22565725
16.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

Kim G, Park H, Joo J, Jang KS, Kwack MJ, Kim S, Kim IG, Oh JH, Kim SA, Park J, Kim S.

Sci Rep. 2015 Jun 10;5:11329. doi: 10.1038/srep11329.

17.

Germanium p-i-n avalanche photodetector fabricated by point defect healing process.

Shim J, Kang DH, Yoo G, Hong ST, Jung WS, Kuh BJ, Lee B, Shin D, Ha K, Kim GS, Yu HY, Baek J, Park JH.

Opt Lett. 2014 Jul 15;39(14):4204-7. doi: 10.1364/OL.39.004204.

PMID:
25121687
18.

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon.

Kuo YH, Lee YK, Ge Y, Ren S, Roth JE, Kamins TI, Miller DA, Harris JS.

Nature. 2005 Oct 27;437(7063):1334-6.

PMID:
16251959
19.

Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors.

Chen L, Preston K, Manipatruni S, Lipson M.

Opt Express. 2009 Aug 17;17(17):15248-56.

PMID:
19688003
20.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

Sandall I, Ng JS, David JP, Tan CH, Wang T, Liu H.

Opt Express. 2012 May 7;20(10):10446-52. doi: 10.1364/OE.20.010446.

PMID:
22565669

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