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Items: 1 to 20 of 511

1.

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.

Zaoui WS, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ, Pauchard A, Campbell JC.

Opt Express. 2009 Jul 20;17(15):12641-9.

PMID:
19654668
2.

Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A.

Opt Express. 2008 Jun 23;16(13):9365-71.

PMID:
18575500
3.

310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection.

Duan N, Liow TY, Lim AE, Ding L, Lo GQ.

Opt Express. 2012 May 7;20(10):11031-6. doi: 10.1364/OE.20.011031.

PMID:
22565725
4.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

Feng NN, Feng D, Liao S, Wang X, Dong P, Liang H, Kung CC, Qian W, Fong J, Shafiiha R, Luo Y, Cunningham J, Krishnamoorthy AV, Asghari M.

Opt Express. 2011 Apr 11;19(8):7062-7. doi: 10.1364/OE.19.007062.

PMID:
21503018
5.

High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.

Joo J, Kim S, Kim IG, Jang KS, Kim G.

Opt Express. 2010 Aug 2;18(16):16474-9. doi: 10.1364/OE.18.016474.

PMID:
20721034
6.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

Martinez NJ, Derose CT, Brock RW, Starbuck AL, Pomerene AT, Lentine AL, Trotter DC, Davids PS.

Opt Express. 2016 Aug 22;24(17):19072-81. doi: 10.1364/OE.24.019072.

PMID:
27557187
7.

Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.

Geis MW, Spector SJ, Grein ME, Yoon JU, Lennon DM, Lyszczarz TM.

Opt Express. 2009 Mar 30;17(7):5193-204.

PMID:
19333283
8.

High speed hybrid silicon evanescent electroabsorption modulator.

Kuo YH, Chen HW, Bowers JE.

Opt Express. 2008 Jun 23;16(13):9936-41.

PMID:
18575563
9.

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

Vivien L, Polzer A, Marris-Morini D, Osmond J, Hartmann JM, Crozat P, Cassan E, Kopp C, Zimmermann H, Fédéli JM.

Opt Express. 2012 Jan 16;20(2):1096-101. doi: 10.1364/OE.20.001096.

PMID:
22274455
10.

Room-temperature electroluminescence from Si microdisks with Ge quantum dots.

Xia J, Takeda Y, Usami N, Maruizumi T, Shiraki Y.

Opt Express. 2010 Jun 21;18(13):13945-50. doi: 10.1364/OE.18.013945.

PMID:
20588527
11.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

Sandall I, Ng JS, David JP, Tan CH, Wang T, Liu H.

Opt Express. 2012 May 7;20(10):10446-52. doi: 10.1364/OE.20.010446.

PMID:
22565669
12.

23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.

Chaisakul P, Marris-Morini D, Rouifed MS, Isella G, Chrastina D, Frigerio J, Le Roux X, Edmond S, Coudevylle JR, Vivien L.

Opt Express. 2012 Jan 30;20(3):3219-24. doi: 10.1364/OE.20.003219.

PMID:
22330559
13.

Multiplication theory for dynamically biased avalanche photodiodes: new limits for gain bandwidth product.

Hayat MM, Ramirez DA.

Opt Express. 2012 Mar 26;20(7):8024-40. doi: 10.1364/OE.20.008024.

PMID:
22453474
14.

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche photodiodes.

Dai D, Chen HW, Bowers JE, Kang Y, Morse M, Paniccia MJ.

Opt Express. 2009 Sep 14;17(19):16549-57. doi: 10.1364/OE.17.016549.

PMID:
19770870
15.

High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode.

Gardes FY, Brimont A, Sanchis P, Rasigade G, Marris-Morini D, O'Faolain L, Dong F, Fedeli JM, Dumon P, Vivien L, Krauss TF, Reed GT, Martí J.

Opt Express. 2009 Nov 23;17(24):21986-91. doi: 10.1364/OE.17.021986.

PMID:
19997443
16.

Multi-channel silicon photonic receiver based on ring-resonators.

Fang Q, Phang YT, Tan CW, Liow TY, Yu MB, Lo GQ, Kwong DL.

Opt Express. 2010 Jun 21;18(13):13510-5. doi: 10.1364/OE.18.013510.

PMID:
20588481
17.

Optical time division multiplexer on silicon chip.

Aboketaf AA, Elshaari AW, Preble SF.

Opt Express. 2010 Jun 21;18(13):13529-35. doi: 10.1364/OE.18.013529.

PMID:
20588483
18.

42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.

Vivien L, Osmond J, Fédéli JM, Marris-Morini D, Crozat P, Damlencourt JF, Cassan E, Lecunff Y, Laval S.

Opt Express. 2009 Apr 13;17(8):6252-7.

PMID:
19365450
19.

Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.

Claussen SA, Tasyurek E, Roth JE, Miller DA.

Opt Express. 2010 Dec 6;18(25):25596-607. doi: 10.1364/OE.18.025596.

PMID:
21164905
20.

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.

Hu Y, Xiang J, Liang G, Yan H, Lieber CM.

Nano Lett. 2008 Mar;8(3):925-30. doi: 10.1021/nl073407b. Epub 2008 Feb 6.

PMID:
18251518

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