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Items: 1 to 20 of 93

1.

All silicon infrared photodiodes: photo response and effects of processing temperature.

Geis MW, Spector SJ, Grein ME, Schulein RJ, Yoon JU, Lennon DM, Wynn CM, Palmacci ST, Gan F, Käertner FX, Lyszczarz TM.

Opt Express. 2007 Dec 10;15(25):16886-95.

PMID:
19550979
2.

10 Gbps silicon waveguide-integrated infrared avalanche photodiode.

Ackert JJ, Karar AS, Paez DJ, Jessop PE, Cartledge JC, Knights AP.

Opt Express. 2013 Aug 26;21(17):19530-7. doi: 10.1364/OE.21.019530.

PMID:
24105500
3.

Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response.

Geis MW, Spector SJ, Grein ME, Yoon JU, Lennon DM, Lyszczarz TM.

Opt Express. 2009 Mar 30;17(7):5193-204.

PMID:
19333283
4.

Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared.

Souhan B, Grote RR, Chen CP, Huang HC, Driscoll JB, Lu M, Stein A, Bakhru H, Bergman K, Green WM, Osgood RM.

Opt Express. 2014 Nov 3;22(22):27415-24. doi: 10.1364/OE.22.027415.

PMID:
25401890
5.

Near-infrared photoresponse of femtosecond-laser processed Se-doped silicon n<sup>+</sup> - n photodiodes.

Du L, Wu Z, Li R, Tang F, Jiang Y.

Opt Lett. 2016 Nov 1;41(21):5031-5034. doi: 10.1364/OL.41.005031.

PMID:
27805678
6.

Photosensitivity of Te-doped silicon photodiodes fabricated using femtosecond laser irradiation.

Li R, Du L, Tang F, Jiang Y, Wu Z.

Appl Opt. 2016 Dec 20;55(36):10211-10214. doi: 10.1364/AO.55.010211.

PMID:
28059239
7.

Silicon photodiodes with high photoconductive gain at room temperature.

Li X, Carey JE, Sickler JW, Pralle MU, Palsule C, Vineis CJ.

Opt Express. 2012 Feb 27;20(5):5518-23. doi: 10.1364/OE.20.005518.

PMID:
22418357
8.

Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes.

Carey JE, Crouch CH, Shen M, Mazur E.

Opt Lett. 2005 Jul 15;30(14):1773-5.

PMID:
16092341
10.

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

Nakhkoob B, Ray S, Hella MM.

Opt Express. 2012 May 7;20(10):11256-70. doi: 10.1364/OE.20.011256.

PMID:
22565748
11.

Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.

Kang Y, Zadka M, Litski S, Sarid G, Morse M, Paniccia MJ, Kuo YH, Bowers J, Beling A, Liu HD, McIntosh DC, Campbell J, Pauchard A.

Opt Express. 2008 Jun 23;16(13):9365-71.

PMID:
18575500
12.

On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide.

Ohira K, Kobayashi K, Iizuka N, Yoshida H, Ezaki M, Uemura H, Kojima A, Nakamura K, Furuyama H, Shibata H.

Opt Express. 2010 Jul 19;18(15):15440-7. doi: 10.1364/OE.18.015440.

PMID:
20720923
13.
14.

Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.

Park H, Fang A, Kodama S, Bowers J.

Opt Express. 2005 Nov 14;13(23):9460-4.

PMID:
19503148
15.
16.

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.

Lioliou G, Mazzillo MC, Sciuto A, Barnett AM.

Opt Express. 2015 Aug 24;23(17):21657-70. doi: 10.1364/OE.23.021657.

PMID:
26368145
17.

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ.

Opt Express. 2014 Jun 30;22(13):15639-52. doi: 10.1364/OE.22.015639.

PMID:
24977823
18.

Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators.

Park S, Tsuchizawa T, Watanabe T, Shinojima H, Nishi H, Yamada K, Ishikawa Y, Wada K, Itabashi S.

Opt Express. 2010 Apr 12;18(8):8412-21. doi: 10.1364/OE.18.008412.

PMID:
20588687
19.

Low-loss amorphous silicon wire waveguide for integrated photonics: effect of fabrication process and the thermal stability.

Zhu S, Lo GQ, Kwong DL.

Opt Express. 2010 Nov 22;18(24):25283-91. doi: 10.1364/OE.18.025283.

PMID:
21164876
20.

Crystallization behavior of silicon quantum dots in a silicon nitride matrix.

Ha R, Kim S, Kim HJ, Lee JC, Bae JS, Kim Y.

J Nanosci Nanotechnol. 2012 Feb;12(2):1448-52.

PMID:
22629976

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