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Items: 1 to 20 of 284

1.

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Waltereit P, Brandt O, Trampert A, Grahn HT, Menniger J, Ramsteiner M, Reiche M, Ploog KH.

Nature. 2000 Aug 24;406(6798):865-8.

PMID:
10972282
2.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

Taniyasu Y, Kasu M, Makimoto T.

Nature. 2006 May 18;441(7091):325-8.

PMID:
16710416
3.

Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency.

Wetzel C, Detchprohm T.

Opt Express. 2011 Jul 4;19 Suppl 4:A962-71. doi: 10.1364/OE.19.00A962.

PMID:
21747568
4.

Evaluation of light emitting diode characteristics for a space-based plant irradiation source.

Barta DJ, Tibbitts TW, Bula RJ, Morrow RC.

Adv Space Res. 1992;12(5):141-9.

PMID:
11537060
5.

Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.

Würtele MA, Kolbe T, Lipsz M, Külberg A, Weyers M, Kneissl M, Jekel M.

Water Res. 2011 Jan;45(3):1481-9. doi: 10.1016/j.watres.2010.11.015. Epub 2010 Nov 16.

PMID:
21115187
6.
7.

Improved light extraction efficiency of InGaN-based multi-quantum well light emitting diodes by using a single die growth.

Park MJ, Kwon KW, Kim YH, Park SH, Kwak JS.

J Nanosci Nanotechnol. 2011 May;11(5):4484-7.

PMID:
21780482
8.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ra YH, Navamathavan R, Park JH, Lee CR.

Nano Lett. 2013 Aug 14;13(8):3506-16. doi: 10.1021/nl400906r. Epub 2013 May 28.

PMID:
23701263
9.

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes.

Ahn D, Park SH.

Sci Rep. 2016 Feb 16;6:20718. doi: 10.1038/srep20718.

10.

White organic light-emitting diodes.

Gather MC, Köhnen A, Meerholz K.

Adv Mater. 2011 Jan 11;23(2):233-48. doi: 10.1002/adma.201002636. Review.

PMID:
20976676
11.

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, Akasaki I, Han J, Sota T.

Nat Mater. 2006 Oct;5(10):810-6. Epub 2006 Sep 3.

PMID:
16951678
12.

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Ma J, Wang L, Liu Z, Yuan G, Ji X, Ma P, Wang J, Yi X, Wang G, Li J.

Opt Express. 2013 Feb 11;21(3):3547-56. doi: 10.1364/OE.21.003547.

PMID:
23481812
13.

Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).

Jang J, Woo S, Min D, Nam O.

J Nanosci Nanotechnol. 2015 Mar;15(3):1895-906.

PMID:
26413605
14.

Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures.

Kim H, Choi KK, Kim KK, Cho J, Lee SN, Park Y, Kwak JS, Seong TY.

Opt Lett. 2008 Jun 1;33(11):1273-5.

PMID:
18516198
15.

Growth and photomorphogenesis of pepper plants under red light-emitting diodes with supplemental blue or far-red lighting.

Brown CS, Schuerger AC, Sager JC.

J Am Soc Hortic Sci. 1995 Sep;120(5):808-13.

PMID:
11540133
16.

Design and fabrication of white light emitting diodes with an omnidirectional reflector.

Su JC, Lu CL, Chu CW.

Appl Opt. 2009 Sep 10;48(26):4942-6. doi: 10.1364/AO.48.004942.

PMID:
19745858
17.

Surface-plasmon-enhanced light emitters based on InGaN quantum wells.

Okamoto K, Niki I, Shvartser A, Narukawa Y, Mukai T, Scherer A.

Nat Mater. 2004 Sep;3(9):601-5. Epub 2004 Aug 22.

PMID:
15322535
18.

Light extraction enhanced white light-emitting diodes with multi-layered phosphor configuration.

You JP, Tran NT, Shi FG.

Opt Express. 2010 Mar 1;18(5):5055-60. doi: 10.1364/OE.18.005055.

20.

High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy.

Reading AH, Richardson JJ, Pan CC, Nakamura S, DenBaars SP.

Opt Express. 2012 Jan 2;20(1):A13-9.

PMID:
22379670

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