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Springerplus. 2013 Apr 10;2(1):151. doi: 10.1186/2193-1801-2-151. Print 2013 Dec.

A review on electronic and optical properties of silicon nanowire and its different growth techniques.

Author information

1
Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Kumargaon, Sylhet, 3114 Bangladesh.

Abstract

Electronic and optical properties of Silicon Nanowire (SiNW) obtained from theoretical studies and experimental approaches have been reviewed. The diameter dependency of bandgap and effective mass of SiNW for various terminations have been presented. Optical absorption of SiNW and nanocone has been compared for different angle of incidences. SiNW shows greater absorption with large range of wavelength and higher range of angle of incidence. Reflectance of SiNW is less than 5% over majority of the spectrum from the UV to near IR region. Thereafter, a brief description of the different growth techniques of SiNW is given. The advantages and disadvantages of the different catalyst materials for SiNW growth are discussed at length. Furthermore, three thermodynamic aspects of SiNW growth via the vapor-liquid-solid mechanism are presented and discussed.

KEYWORDS:

Bandgap; Chemical Vapour Deposition (CVD); Molecular Beam Epitaxy (MBE); Optical absorption; Reflectance; Silicon Nanowires (SiNWs)

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