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CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films.

Kusaba A, Li G, Kempisty P, von Spakovsky MR, Kangawa Y.

Materials (Basel). 2019 Mar 23;12(6). pii: E972. doi: 10.3390/ma12060972.


Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at the GaN(0001) surface.

Kempisty P, Strąk P, Sakowski K, Kangawa Y, Krukowski S.

Phys Chem Chem Phys. 2017 Nov 8;19(43):29676-29684. doi: 10.1039/c7cp05214f.


Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics.

Kusaba A, Li G, von Spakovsky MR, Kangawa Y, Kakimoto K.

Materials (Basel). 2017 Aug 15;10(8). pii: E948. doi: 10.3390/ma10080948.


Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.

Kangawa Y, Akiyama T, Ito T, Shiraishi K, Nakayama T.

Materials (Basel). 2013 Aug 6;6(8):3309-3360. doi: 10.3390/ma6083309. Review.

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