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Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Sun F, Li C, Fu C, Zhou X, Luo J, Zou W, Qiu ZJ, Wu D.

Materials (Basel). 2018 Mar 22;11(4). pii: E471. doi: 10.3390/ma11040471.


Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

Fu C, Zhou X, Wang Y, Xu P, Xu M, Wu D, Luo J, Zhao C, Zhang SL.

Materials (Basel). 2016 Apr 27;9(5). pii: E315. doi: 10.3390/ma9050315.

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