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Items: 3

1.

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing.

Hsu CH, Cho YS, Wu WY, Lien SY, Zhang XY, Zhu WZ, Zhang S, Chen SY.

Nanoscale Res Lett. 2019 Apr 18;14(1):139. doi: 10.1186/s11671-019-2969-z.

2.

Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism.

Zhang XY, Hsu CH, Lien SY, Wu WY, Ou SL, Chen SY, Huang W, Zhu WZ, Xiong FB, Zhang S.

Nanoscale Res Lett. 2019 Mar 7;14(1):83. doi: 10.1186/s11671-019-2915-0.

3.

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Zhang XY, Hsu CH, Lien SY, Chen SY, Huang W, Yang CH, Kung CY, Zhu WZ, Xiong FB, Meng XG.

Nanoscale Res Lett. 2017 Dec;12(1):324. doi: 10.1186/s11671-017-2098-5. Epub 2017 May 4.

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