Format
Sort by

Send to

Choose Destination

Search results

Items: 5

1.

Editorial for the Special Issue on Miniaturized Transistors.

Filipovic L, Grasser T.

Micromachines (Basel). 2019 May 2;10(5). pii: E300. doi: 10.3390/mi10050300.

2.

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.

Stampfer B, Zhang F, Illarionov YY, Knobloch T, Wu P, Waltl M, Grill A, Appenzeller J, Grasser T.

ACS Nano. 2018 Jun 26;12(6):5368-5375. doi: 10.1021/acsnano.8b00268. Epub 2018 Jun 12.

PMID:
29878746
3.

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.

Illarionov YY, Waltl M, Rzepa G, Kim JS, Kim S, Dodabalapur A, Akinwande D, Grasser T.

ACS Nano. 2016 Oct 25;10(10):9543-9549. doi: 10.1021/acsnano.6b04814. Epub 2016 Oct 7.

PMID:
27704779
4.

Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices.

Wimmer Y, El-Sayed AM, Gös W, Grasser T, Shluger AL.

Proc Math Phys Eng Sci. 2016 Jun;472(2190):20160009.

5.

Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide.

El-Sayed AM, Watkins MB, Grasser T, Afanas'ev VV, Shluger AL.

Phys Rev Lett. 2015 Mar 20;114(11):115503. Epub 2015 Mar 18.

PMID:
25839289

Supplemental Content

Loading ...
Support Center