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Items: 6

1.

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.

Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, Yan B, Xu R, Li Y.

Micromachines (Basel). 2018 Aug 10;9(8). pii: E396. doi: 10.3390/mi9080396.

2.

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

Wu Y, Zou X, Sun M, Cao Z, Wang X, Huo S, Zhou J, Yang Y, Yu X, Kong Y, Yu G, Liao L, Chen T.

ACS Appl Mater Interfaces. 2016 Oct 5;8(39):25645-25649. Epub 2016 Sep 26.

PMID:
27640732
3.

Transparent megahertz circuits from solution-processed composite thin films.

Liu X, Wan D, Wu Y, Xiao X, Guo S, Jiang C, Li J, Chen T, Duan X, Fan Z, Liao L.

Nanoscale. 2016 Apr 21;8(15):7978-83. doi: 10.1039/c6nr00602g.

PMID:
27009830
4.

Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.

Yu Z, Ong ZY, Pan Y, Cui Y, Xin R, Shi Y, Wang B, Wu Y, Chen T, Zhang YW, Zhang G, Wang X.

Adv Mater. 2016 Jan 20;28(3):547-52. doi: 10.1002/adma.201503033. Epub 2015 Nov 25.

PMID:
26603698
5.

High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics.

Cui Y, Xin R, Yu Z, Pan Y, Ong ZY, Wei X, Wang J, Nan H, Ni Z, Wu Y, Chen T, Shi Y, Wang B, Zhang G, Zhang YW, Wang X.

Adv Mater. 2015 Sep 16;27(35):5230-4. doi: 10.1002/adma.201502222. Epub 2015 Aug 10.

PMID:
26255894
6.

Interface engineering for high-performance top-gated MoS2 field-effect transistors.

Zou X, Wang J, Chiu CH, Wu Y, Xiao X, Jiang C, Wu WW, Mai L, Chen T, Li J, Ho JC, Liao L.

Adv Mater. 2014 Sep;26(36):6255-61. doi: 10.1002/adma.201402008. Epub 2014 Jul 28.

PMID:
25070646

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