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An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.

Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, Yan B, Xu R, Li Y.

Micromachines (Basel). 2018 Aug 10;9(8). pii: E396. doi: 10.3390/mi9080396.


Investigation on the I⁻V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.

Mao S, Xu Y.

Micromachines (Basel). 2018 Nov 5;9(11). pii: E571. doi: 10.3390/mi9110571.

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