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Items: 18

1.

A Multi-level Memristor Based on Al-Doped HfO2 Thin Film.

Wu L, Liu H, Li J, Wang S, Wang X.

Nanoscale Res Lett. 2019 May 28;14(1):177. doi: 10.1186/s11671-019-3015-x.

2.

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates.

Han T, Liu H, Wang S, Chen S, Li W, Yang X, Cai M, Yang K.

Nanomaterials (Basel). 2019 May 14;9(5). pii: E740. doi: 10.3390/nano9050740.

3.

Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer.

Zhao L, Liu H, Wang X, Wang Y, Wang S.

Nanomaterials (Basel). 2019 May 4;9(5). pii: E697. doi: 10.3390/nano9050697.

4.

Probing the Growth Improvement of Large-Size High Quality Monolayer MoS₂ by APCVD.

Han T, Liu H, Wang S, Chen S, Li W, Yang X.

Nanomaterials (Basel). 2019 Mar 14;9(3). pii: E433. doi: 10.3390/nano9030433.

5.

The Influence of Copper Substrates on Irradiation Effects of Graphene: A Molecular Dynamics Study.

Wang S, Zhang Q, Yin K, Gao B, Zhang S, Wang G, Liu H.

Materials (Basel). 2019 Jan 21;12(2). pii: E319. doi: 10.3390/ma12020319.

6.

A New Electro-Optical Switch Modulator Based on the Surface Plasmon Polaritons of Graphene in Mid-Infrared Band.

Cai M, Wang S, Gao B, Wang Y, Han T, Liu H.

Sensors (Basel). 2018 Dec 28;19(1). pii: E89. doi: 10.3390/s19010089.

7.

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS₂ by APCVD.

Han T, Liu H, Wang S, Li W, Chen S, Yang X, Cai M.

Materials (Basel). 2018 Dec 17;11(12). pii: E2562. doi: 10.3390/ma11122562.

8.

Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La₂O₃ Passivation Layer.

Zhao L, Liu H, Wang X, Wang Y, Wang S.

Materials (Basel). 2018 Nov 20;11(11). pii: E2333. doi: 10.3390/ma11112333.

9.

Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.

Chen S, Liu H, Wang S, Li W, Wang X, Zhao L.

Nanoscale Res Lett. 2018 Oct 12;13(1):321. doi: 10.1186/s11671-018-2723-y.

10.

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor.

Li W, Liu H, Wang S, Chen S, Wang Q.

Nanoscale Res Lett. 2018 Mar 5;13(1):73. doi: 10.1186/s11671-018-2483-8.

11.

Zingerone attenuates diabetic nephropathy through inhibition of nicotinamide adenine dinucleotide phosphate oxidase 4.

Cui Y, Shi Y, Bao Y, Wang S, Hua Q, Liu Y.

Biomed Pharmacother. 2018 Mar;99:422-430. doi: 10.1016/j.biopha.2018.01.051.

PMID:
29367111
12.

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.

Li W, Liu H, Wang S, Chen S, Wang Q.

Nanoscale Res Lett. 2017 Sep 6;12(1):524. doi: 10.1186/s11671-017-2294-3.

13.

Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge.

Zhao L, Liu H, Wang X, Wang Y, Wang S.

Materials (Basel). 2017 Jul 26;10(8). pii: E856. doi: 10.3390/ma10080856.

14.

Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.

Li W, Liu H, Wang S, Chen S, Yang Z.

Nanoscale Res Lett. 2017 Dec;12(1):198. doi: 10.1186/s11671-017-1958-3. Epub 2017 Mar 16.

15.

A Distributed Learning Method for ℓ 1 -Regularized Kernel Machine over Wireless Sensor Networks.

Ji X, Hou C, Hou Y, Gao F, Wang S.

Sensors (Basel). 2016 Jul 1;16(7). pii: E1021. doi: 10.3390/s16071021.

16.

Doppler ultrasound-guided percutaneous nephrolithotomy with two-step tract dilation for management of complex renal stones.

Xu Y, Wu Z, Yu J, Wang S, Li F, Chen J, Liu J, Chen K.

Urology. 2012 Jun;79(6):1247-51. doi: 10.1016/j.urology.2011.12.027. Epub 2012 Feb 25.

PMID:
22365450
17.

Identification of robust hypoxia biomarker candidates from fin of medaka (Oryzias latipes).

Zhang Z, Wells MC, Boswell MG, Beldorth I, Kirk LM, Wang Y, Wang S, Savage M, Walter RB, Booth RE.

Comp Biochem Physiol C Toxicol Pharmacol. 2012 Jan;155(1):11-7. doi: 10.1016/j.cbpc.2011.05.015. Epub 2011 Jun 1.

18.

Fabrication of highly-ordered nanopatterned copper nanowire arrays by photolithography.

Li X, Wang Y, Song G, She X, Peng Z, Wang S, Li J.

J Nanosci Nanotechnol. 2010 Jul;10(7):4363-7.

PMID:
21128426

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