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Items: 13

1.

Beyond OLED: Efficient Quantum Dot Light-Emitting Diodes for Display and Lighting Application.

Sun Y, Jiang Y, Sun XW, Zhang S, Chen S.

Chem Rec. 2019 Jan 30. doi: 10.1002/tcr.201800191. [Epub ahead of print] Review.

PMID:
30698895
2.

A low-temperature-annealed and UV-ozone-enhanced combustion derived nickel oxide hole injection layer for flexible quantum dot light-emitting diodes.

Sun Y, Chen W, Wu Y, He Z, Zhang S, Chen S.

Nanoscale. 2019 Jan 17;11(3):1021-1028. doi: 10.1039/c8nr08976k.

PMID:
30569931
3.

SnO2-rGO nanocomposite as an efficient electron transport layer for stable perovskite solar cells on AZO substrate.

Liu R, Qiu R, Zou T, Liu C, Chen J, Dai Q, Zhang S, Zhou H.

Nanotechnology. 2019 Feb 15;30(7):075202. doi: 10.1088/1361-6528/aaf2ad. Epub 2018 Nov 21.

PMID:
30524051
4.

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via PCBM Interlayer.

Xu X, Yan L, Zou T, Qiu R, Liu C, Dai Q, Chen J, Zhang S, Zhou H.

ACS Appl Mater Interfaces. 2018 Nov 23. doi: 10.1021/acsami.8b16346. [Epub ahead of print]

PMID:
30468066
5.

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer.

Sun Y, Wang W, Zhang H, Su Q, Wei J, Liu P, Chen S, Zhang S.

ACS Appl Mater Interfaces. 2018 Jun 6;10(22):18902-18909. doi: 10.1021/acsami.8b04754. Epub 2018 May 24.

PMID:
29745643
6.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.

ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25850-25857. doi: 10.1021/acsami.7b13211. Epub 2017 Dec 13.

PMID:
29235839
7.

Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer.

Sun Y, Jiang Y, Peng H, Wei J, Zhang S, Chen S.

Nanoscale. 2017 Jul 6;9(26):8962-8969. doi: 10.1039/c7nr02099f.

PMID:
28548170
8.

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate.

Cong Y, Han D, Dong J, Zhang S, Zhang X, Wang Y.

Sci Rep. 2017 May 4;7(1):1497. doi: 10.1038/s41598-017-01691-7.

9.

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

Li H, Han D, Liu L, Dong J, Cui G, Zhang S, Zhang X, Wang Y.

Nanoscale Res Lett. 2017 Dec;12(1):223. doi: 10.1186/s11671-017-1999-7. Epub 2017 Mar 24.

10.

Solution-Processed MoS2 /Organolead Trihalide Perovskite Photodetectors.

Wang Y, Fullon R, Acerce M, Petoukhoff CE, Yang J, Chen C, Du S, Lai SK, Lau SP, Voiry D, O'Carroll D, Gupta G, Mohite AD, Zhang S, Zhou H, Chhowalla M.

Adv Mater. 2017 Jan;29(4). doi: 10.1002/adma.201603995. Epub 2016 Nov 21.

PMID:
27869345
11.

Photoreactive and Metal-Platable Copolymer Inks for High-Throughput, Room-Temperature Printing of Flexible Metal Electrodes for Thin-Film Electronics.

Yu Y, Xiao X, Zhang Y, Li K, Yan C, Wei X, Chen L, Zhen H, Zhou H, Zhang S, Zheng Z.

Adv Mater. 2016 Jun;28(24):4926-34. doi: 10.1002/adma.201505119. Epub 2016 Apr 13.

PMID:
27074139
12.

Solution-processed photodetectors based on organic-inorganic hybrid perovskite and nanocrystalline graphite.

Wang Y, Xia Z, Du S, Yuan F, Li Z, Li Z, Dai Q, Wang H, Luo S, Zhang S, Zhou H.

Nanotechnology. 2016 Apr 29;27(17):175201. doi: 10.1088/0957-4484/27/17/175201. Epub 2016 Mar 15.

PMID:
26978061
13.

Flexible thin-film transistors on plastic substrate at room temperature.

Han D, Wang W, Cai J, Wang L, Ren Y, Wang Y, Zhang S.

J Nanosci Nanotechnol. 2013 Jul;13(7):5154-7.

PMID:
23901545

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