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Items: 5


Electrical and Physical Characteristics of WO₃/Ag/WO₃ Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology †.

Wang SJ, Wang MC, Chen SF, Li YH, Shen TS, Bor HY, Wei CN.

Sensors (Basel). 2018 Aug 25;18(9). pii: E2803. doi: 10.3390/s18092803.


Teflon/SiO₂ Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process.

Fan CL, Shang MC, Li BJ, Lin YZ, Wang SJ, Lee WD, Hung BR.

Materials (Basel). 2015 Apr 13;8(4):1704-1713. doi: 10.3390/ma8041704.


A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme.

Fan CL, Shang MC, Li BJ, Lin YZ, Wang SJ, Lee WD.

Materials (Basel). 2014 Aug 11;7(8):5761-5768. doi: 10.3390/ma7085761.


High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Chen SH, Liao WS, Yang HC, Wang SJ, Liaw YG, Wang H, Gu H, Wang MC.

Nanoscale Res Lett. 2012 Aug 1;7(1):431. doi: 10.1186/1556-276X-7-431.

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