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Nanotechnology. 2016 Nov 25;27(47):475501. Epub 2016 Oct 24.

A carbon nanotube based x-ray detector.

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Institute for Materials Science, Technische Universität Dresden, Helmholtzstr 7, D-01187 Dresden, Germany.


X-ray detectors based on metal-oxide semiconductor field effect transistors couple instantaneous measurement with high accuracy. However, they only have a limited measurement lifetime because they undergo permanent degradation due to x-ray beam exposure. A field effect transistor based on carbon nanotubes (CNTs), however, overcomes this drawback of permanent degradation, because it can be reset into its starting state after being exposed to the x-ray beam. In this work the CNTs were deposited using a dielectrophoresis method on SiO2 coated p-type (boron-doped) Si substrates. For the prepared devices a best gate voltage shift of 244 V Gy-1 and a source-drain current sensitivity of 382 nA Gy-1 were achieved. These values are larger than those reached by the currently used MOSFET based devices.

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