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Items: 1 to 20 of 28

1.

NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition.

Wu MR, Li WZ, Tung CY, Huang CY, Chiang YH, Liu PL, Horng RH.

Sci Rep. 2019 May 16;9(1):7459. doi: 10.1038/s41598-019-43752-z.

2.

Performance comparison of III-V//Si and III-V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding.

Kao YC, Chou HM, Hsu SC, Lin A, Lin CC, Shih ZH, Chang CL, Hong HF, Horng RH.

Sci Rep. 2019 Mar 13;9(1):4308. doi: 10.1038/s41598-019-40727-y.

3.

Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films.

Tsai SH, Basu S, Huang CY, Hsu LC, Lin YG, Horng RH.

Sci Rep. 2018 Sep 19;8(1):14056. doi: 10.1038/s41598-018-32412-3.

4.

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.

Tasi CT, Wang WK, Ou SL, Huang SY, Horng RH, Wuu DS.

Nanomaterials (Basel). 2018 Sep 10;8(9). pii: E704. doi: 10.3390/nano8090704.

5.

Tunability of p- and n-channel TiOx thin film transistors.

Peng WC, Chen YC, He JL, Ou SL, Horng RH, Wuu DS.

Sci Rep. 2018 Jun 18;8(1):9255. doi: 10.1038/s41598-018-27598-5.

6.

AlGaInP Red LEDs with Hollow Hemispherical Polystyrene Arrays.

Cheng WC, Huang SY, Chen YJ, Wang CS, Lin HY, Wu TM, Horng RH.

Sci Rep. 2018 Jan 17;8(1):911. doi: 10.1038/s41598-018-19405-y.

7.

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

Tasi CT, Wang WK, Tsai TY, Huang SY, Horng RH, Wuu DS.

Materials (Basel). 2017 May 31;10(6). pii: E605. doi: 10.3390/ma10060605.

8.

External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes.

Horng RH, Tien CH, Chuang SH, Liu KC, Wuu DS.

Opt Express. 2015 Nov 30;23(24):31334-41. doi: 10.1364/OE.23.031334.

PMID:
26698760
9.

Large-area, uniform white light LED source on a flexible substrate.

Sher CW, Chen KJ, Lin CC, Han HV, Lin HY, Tu ZY, Tu HH, Honjo K, Jiang HY, Ou SL, Horng RH, Li X, Fu CC, Kuo HC.

Opt Express. 2015 Sep 21;23(19):A1167-78. doi: 10.1364/OE.23.0A1167.

PMID:
26406747
10.

Performance improvement of vertical ultraviolet-LEDs with AlSi alloy substrates.

Chen KC, Huang SY, Wang WK, Horng RH.

Opt Express. 2015 Jun 15;23(12):15452-8. doi: 10.1364/OE.23.015452.

PMID:
26193525
11.

Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate.

Wu FL, Ou SL, Kao YC, Chen CL, Tseng MC, Lu FC, Lin MT, Horng RH.

Opt Express. 2015 Jul 13;23(14):18156-65. doi: 10.1364/OE.23.018156.

PMID:
26191874
12.

P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer.

Tseng MC, Chen CL, Lai NK, Chen SI, Hsu TC, Peng YR, Horng RH.

Opt Express. 2014 Dec 15;22 Suppl 7:A1862-7. doi: 10.1364/OE.22.0A1862.

PMID:
25607500
13.

Enhanced light output power of thin film GaN-based high voltage light-emitting diodes.

Tien CH, Chen KY, Hsu CP, Horng RH.

Opt Express. 2014 Oct 20;22 Suppl 6:A1462-8. doi: 10.1364/OE.22.0A1462.

PMID:
25607303
14.

White thin-film flip-chip LEDs with uniform color temperature using laser lift-off and conformal phosphor coating technologies.

Lin HT, Tien CH, Hsu CP, Horng RH.

Opt Express. 2014 Dec 29;22(26):31646-53. doi: 10.1364/OE.22.031646.

PMID:
25607135
15.

Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.

Chuang SH, Tsung CS, Chen CH, Ou SL, Horng RH, Lin CY, Wuu DS.

ACS Appl Mater Interfaces. 2015 Feb 4;7(4):2546-53. doi: 10.1021/am507481n. Epub 2015 Jan 23.

PMID:
25562635
16.

High performance GaN-based flip-chip LEDs with different electrode patterns.

Horng RH, Chuang SH, Tien CH, Lin SC, Wuu DS.

Opt Express. 2014 May 5;22 Suppl 3:A941-6. doi: 10.1364/OE.22.00A941.

PMID:
24922399
17.

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance.

Wen SY, Hu HL, Tsai YJ, Hsu CP, Lin RC, Horng RH.

Opt Express. 2014 May 5;22 Suppl 3:A601-6. doi: 10.1364/OE.22.00A601.

PMID:
24922368
18.

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates.

Horng RH, Wu BR, Tien CH, Ou SL, Yang MH, Kuo HC, Wuu DS.

Opt Express. 2014 Jan 13;22 Suppl 1:A179-87. doi: 10.1364/OE.22.00A179.

PMID:
24921994
19.

Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications.

Shen KC, Jiang MC, Liu HR, Hsueh HH, Kao YC, Horng RH, Wuu DS.

Opt Express. 2013 Nov 4;21(22):26468-74. doi: 10.1364/OE.21.026468.

PMID:
24216867
20.

Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers.

Ravadgar P, Horng RH, Yao SD, Lee HY, Wu BR, Ou SL, Tu LW.

Opt Express. 2013 Oct 21;21(21):24599-610. doi: 10.1364/OE.21.024599.

PMID:
24150304

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