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Items: 1 to 20 of 24

1.

Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloys.

Boschker JE, Lü X, Bragaglia V, Wang R, Grahn HT, Calarco R.

Sci Rep. 2018 Apr 12;8(1):5889. doi: 10.1038/s41598-018-23221-9.

2.

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R.

Sci Rep. 2018 Mar 19;8(1):5015. doi: 10.1038/s41598-018-23156-1.

3.

Ferroelectric Control of the Spin Texture in GeTe.

Rinaldi C, Varotto S, Asa M, Sławińska J, Fujii J, Vinai G, Cecchi S, Di Sante D, Calarco R, Vobornik I, Panaccione G, Picozzi S, Bertacco R.

Nano Lett. 2018 May 9;18(5):2751-2758. doi: 10.1021/acs.nanolett.7b04829. Epub 2018 Feb 13.

4.

Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlattices.

Momand J, Wang R, Boschker JE, Verheijen MA, Calarco R, Kooi BJ.

Nanoscale. 2017 Jun 29;9(25):8774-8780. doi: 10.1039/c7nr01684k.

PMID:
28621784
5.

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Zallo E, Cecchi S, Boschker JE, Mio AM, Arciprete F, Privitera S, Calarco R.

Sci Rep. 2017 May 3;7(1):1466. doi: 10.1038/s41598-017-01502-z. Erratum in: Sci Rep. 2018 Mar 19;8(1):5015.

6.

Chemical and structural arrangement of the trigonal phase in GeSbTe thin films.

Mio AM, Privitera SM, Bragaglia V, Arciprete F, Bongiorno C, Calarco R, Rimini E.

Nanotechnology. 2017 Feb 10;28(6):065706. doi: 10.1088/1361-6528/28/6/065706. Epub 2017 Jan 4.

PMID:
28050966
7.

Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films.

Wang R, Campi D, Bernasconi M, Momand J, Kooi BJ, Verheijen MA, Wuttig M, Calarco R.

Sci Rep. 2016 Sep 9;6:32895. doi: 10.1038/srep32895.

8.

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R.

Sci Rep. 2016 Aug 16;6:31679. doi: 10.1038/srep31679. No abstract available.

9.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Bragaglia V, Arciprete F, Zhang W, Mio AM, Zallo E, Perumal K, Giussani A, Cecchi S, Boschker JE, Riechert H, Privitera S, Rimini E, Mazzarello R, Calarco R.

Sci Rep. 2016 Apr 1;6:23843. doi: 10.1038/srep23843. Erratum in: Sci Rep. 2016 Aug 16;6:31679.

10.

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices.

Casarin B, Caretta A, Momand J, Kooi BJ, Verheijen MA, Bragaglia V, Calarco R, Chukalina M, Yu X, Robertson J, Lange FR, Wuttig M, Redaelli A, Varesi E, Parmigiani F, Malvestuto M.

Sci Rep. 2016 Mar 1;6:22353. doi: 10.1038/srep22353.

11.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

Mitrofanov KV, Fons P, Makino K, Terashima R, Shimada T, Kolobov AV, Tominaga J, Bragaglia V, Giussani A, Calarco R, Riechert H, Sato T, Katayama T, Ogawa K, Togashi T, Yabashi M, Wall S, Brewe D, Hase M.

Sci Rep. 2016 Feb 12;6:20633. doi: 10.1038/srep20633.

12.

Coincident-site lattice matching during van der Waals epitaxy.

Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R.

Sci Rep. 2015 Dec 14;5:18079. doi: 10.1038/srep18079.

13.

Giant Rashba-Type Spin Splitting in Ferroelectric GeTe(111).

Liebmann M, Rinaldi C, Di Sante D, Kellner J, Pauly C, Wang RN, Boschker JE, Giussani A, Bertoli S, Cantoni M, Baldrati L, Asa M, Vobornik I, Panaccione G, Marchenko D, Sánchez-Barriga J, Rader O, Calarco R, Picozzi S, Bertacco R, Morgenstern M.

Adv Mater. 2016 Jan 20;28(3):560-5. doi: 10.1002/adma.201503459. Epub 2015 Nov 24.

PMID:
26599640
14.

Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlattices.

Momand J, Wang R, Boschker JE, Verheijen MA, Calarco R, Kooi BJ.

Nanoscale. 2015 Dec 7;7(45):19136-43. doi: 10.1039/c5nr04530d. Epub 2015 Nov 2.

PMID:
26523888
15.

Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe)2(Sb2Te3)1]n topological superlattices.

Bang D, Awano H, Tominaga J, Kolobov AV, Fons P, Saito Y, Makino K, Nakano T, Hase M, Takagaki Y, Giussani A, Calarco R, Murakami S.

Sci Rep. 2014 Jul 17;4:5727. doi: 10.1038/srep05727.

16.

Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate.

Boschker JE, Momand J, Bragaglia V, Wang R, Perumal K, Giussani A, Kooi BJ, Riechert H, Calarco R.

Nano Lett. 2014 Jun 11;14(6):3534-8. doi: 10.1021/nl5011492. Epub 2014 May 13. Erratum in: Nano Lett. 2014 Aug 13;14(8):4924.

PMID:
24810315
17.

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Fernández-Garrido S, Kong X, Gotschke T, Calarco R, Geelhaar L, Trampert A, Brandt O.

Nano Lett. 2012 Dec 12;12(12):6119-25. doi: 10.1021/nl302664q. Epub 2012 Nov 9.

PMID:
23130785
18.

Flux quantization effects in InN nanowires.

Richter T, Blömers C, Lüth H, Calarco R, Indlekofer M, Marso M, Schäpers T.

Nano Lett. 2008 Sep;8(9):2834-8. doi: 10.1021/nl8014389. Epub 2008 Aug 20.

PMID:
18712932
19.

Interface and wetting layer effect on the catalyst-free nucleation and growth of GaN nanowires.

Stoica T, Sutter E, Meijers RJ, Debnath RK, Calarco R, Lüth H, Grützmacher D.

Small. 2008 Jun;4(6):751-4. doi: 10.1002/smll.200700936. No abstract available.

PMID:
18535990
20.

Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

Calarco R, Meijers RJ, Debnath RK, Stoica T, Sutter E, Lüth H.

Nano Lett. 2007 Aug;7(8):2248-51. Epub 2007 Jun 29.

PMID:
17602537

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