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Nanoscale. 2015 Mar 12;7(12):5152-6. doi: 10.1039/c4nr07645a.

Structural distortion in graphitic-C3N4 realizing an efficient photoreactivity.

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Hefei National Laboratory for Physical Sciences at Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei 230026, P. R. China.


Introducing structural distortion to semiconductors can dramatically modify their electronic structures, resulting in efficient separation of electron-hole pairs and achieving high photocatalytic activity of catalysts. Herein, we systematically studied the role that structural distortion played in the photocatalytic process by taking graphitic-C3N4 (g-C3N4) as an example, where the structural distortion can be introduced by elemental doping and heat treatment. Through the controllable structural distortion engineering, the photocatalytic activity of g-C3N4 can be significantly improved, which benefits from the effective separation of photogenerated electron-hole pairs, showing intriguing structural distortion-dependent photocatalytic activity. This study not only offers a new insight into the in-depth understanding of the effect of structural distortion on the photoreactivity of catalysts, but also provides a new pathway for designing advanced photocatalysts.

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