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Materials (Basel). 2015 Aug 17;8(8):5313-5320. doi: 10.3390/ma8085244.

Capacitive Behavior of Single Gallium Oxide Nanobelt.

Author information

1
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China. caihaitao2000@mail.dlut.edu.cn.
2
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China. liuhang@dlut.edu.cn.
3
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China. zhuhuichao@dlut.edu.cn.
4
School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China. shaopai@gwu.edu.
5
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China. houcm@jlu.edu.cn.

Abstract

In this research, monocrystalline gallium oxide (Ga₂O₃) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga₂O₃ nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga₂O₃ nanobelt, indicating the existence of capacitive elements in the Pt/Ga₂O₃/Pt structure.

KEYWORDS:

Ga2O3; capacitive behavior; impedance analysis; nanobelt

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