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Sensors (Basel). 2013 Jan 31;13(2):1856-71. doi: 10.3390/s130201856.

A new mirroring circuit for power MOS current sensing highly immune to EMI.

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Microelectronics EMC Group, Eln. Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, Turin, Italy.


This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.

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