Format
Sort by
Items per page

Send to

Choose Destination

Search results

Items: 1 to 20 of 26

1.

Band Anti-Crossing Model in Dilute-As GaNAs Alloys.

Goodrich JC, Borovac D, Tan CK, Tansu N.

Sci Rep. 2019 Mar 26;9(1):5128. doi: 10.1038/s41598-019-41286-y.

2.

Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides.

Fragkos IE, Tansu N.

Sci Rep. 2018 Sep 6;8(1):13365. doi: 10.1038/s41598-018-31821-8.

3.

Shear-Induced Changes of Electronic Properties in Gallium Nitride.

Zeng G, Yang X, Tan CK, Marvel CJ, Koel BE, Tansu N, Krick BA.

ACS Appl Mater Interfaces. 2018 Aug 29;10(34):29048-29057. doi: 10.1021/acsami.8b02271. Epub 2018 Aug 16.

PMID:
29954172
4.

First-Principle Study of the Optical Properties of Dilute-P GaN1-xPx Alloys.

Borovac D, Tan CK, Tansu N.

Sci Rep. 2018 Apr 16;8(1):6025. doi: 10.1038/s41598-018-24384-1.

5.

Ultra-Broadband Optical Gain in III-Nitride Digital Alloys.

Sun W, Tan CK, Wierer JJ Jr, Tansu N.

Sci Rep. 2018 Feb 15;8(1):3109. doi: 10.1038/s41598-018-21434-6.

6.

Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear.

Zeng G, Sun W, Song R, Tansu N, Krick BA.

Sci Rep. 2018 Feb 2;8(1):2580. doi: 10.1038/s41598-018-19513-9.

7.

Investigations of the Optical Properties of GaNAs Alloys by First-Principle.

Borovac D, Tan CK, Tansu N.

Sci Rep. 2017 Dec 11;7(1):17285. doi: 10.1038/s41598-017-17504-w.

8.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

Fragkos IE, Dierolf V, Fujiwara Y, Tansu N.

Sci Rep. 2017 Dec 1;7(1):16773. doi: 10.1038/s41598-017-17033-6.

9.

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes.

Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N.

Sci Rep. 2017 Nov 7;7(1):14648. doi: 10.1038/s41598-017-15302-y.

10.

Crystal Orientation Dependence of Gallium Nitride Wear.

Zeng G, Sun W, Song R, Tansu N, Krick BA.

Sci Rep. 2017 Oct 26;7(1):14126. doi: 10.1038/s41598-017-14234-x. Erratum in: Sci Rep. 2018 Feb 2;8(1):2580.

11.

AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

Sun W, Tan CK, Tansu N.

Sci Rep. 2017 Sep 19;7(1):11826. doi: 10.1038/s41598-017-12125-9.

12.

Wide-field high-speed space-division multiplexing optical coherence tomography using an integrated photonic device.

Huang Y, Badar M, Nitkowski A, Weinroth A, Tansu N, Zhou C.

Biomed Opt Express. 2017 Jul 28;8(8):3856-3867. doi: 10.1364/BOE.8.003856. eCollection 2017 Aug 1.

13.
14.

First-Principle Electronic Properties of Dilute-P GaN(1-x)P(x) Alloy for Visible Light Emitters.

Tan CK, Borovac D, Sun W, Tansu N.

Sci Rep. 2016 Apr 14;6:24412. doi: 10.1038/srep24412.

15.

Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters.

Tan CK, Sun W, Borovac D, Tansu N.

Sci Rep. 2016 Mar 10;6:22983. doi: 10.1038/srep22983.

16.

Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter.

Tan CK, Borovac D, Sun W, Tansu N.

Sci Rep. 2016 Feb 24;6:22215. doi: 10.1038/srep22215.

17.

Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes.

Zhu P, Tan CK, Sun W, Tansu N.

Appl Opt. 2015 Dec 1;54(34):10299-303. doi: 10.1364/AO.54.010299.

PMID:
26836692
18.

InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.

Tan CK, Borovac D, Sun W, Tansu N.

Sci Rep. 2016 Jan 13;6:19271. doi: 10.1038/srep19271.

19.

Resonant cavity effect optimization of III-nitride thin-film flip-chip light-emitting diodes with microsphere arrays.

Zhu P, Tansu N.

Appl Opt. 2015 Jul 10;54(20):6305-12. doi: 10.1364/AO.54.006305.

PMID:
26193408
20.

Conductivity of Nanowire Arrays under Random and Ordered Orientation Configurations.

Jagota M, Tansu N.

Sci Rep. 2015 May 15;5:10219. doi: 10.1038/srep10219.

Supplemental Content

Loading ...
Support Center