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Micromachines (Basel). 2019 Oct 31;10(11). pii: E745. doi: 10.3390/mi10110745.

Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining.

Author information

1
Department of Adaptive Machine Systems, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan. djkim@eco.sanken.osaka-u.ac.jp.
2
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan. djkim@eco.sanken.osaka-u.ac.jp.
3
Specialty products development, Tokuyama Co., Yamaguchi 746-0006, Japan. yasu-yamamoto@tokuyama.co.jp.
4
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan. shijo.nagao@sanken.osaka-u.ac.jp.
5
Division of system development, Yamato Scientific Co., Ltd., Tokyo 135-0047, Japan. naoki.wakasugi@yamato-net.co.jp.
6
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan. chenchuantong@sanken.osaka-u.ac.jp.
7
The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan. suganuma@sanken.osaka-u.ac.jp.

Abstract

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

KEYWORDS:

Ag sinter paste; SiC micro-heater chip; direct bonded copper (DBC) substrate; power cycle test; thermal resistance; wide band-gap (WBG)

PMID:
31683662
DOI:
10.3390/mi10110745
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