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Items: 4


Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.

Baira M, Salem B, Ahamad Madhar N, Ilahi B.

Micromachines (Basel). 2019 Apr 12;10(4). pii: E243. doi: 10.3390/mi10040243.


Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.

Baira M, Salem B, Madhar NA, Ilahi B.

Nanomaterials (Basel). 2019 Jan 19;9(1). pii: E124. doi: 10.3390/nano9010124.


Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Al-Saigh R, Baira M, Salem B, Ilahi B.

Nanoscale Res Lett. 2018 Jun 7;13(1):172. doi: 10.1186/s11671-018-2587-1.


Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.

Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B.

Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699.

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