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Materials (Basel). 2018 Jan 17;11(1). pii: E150. doi: 10.3390/ma11010150.

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts.

Author information

1
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. michihiro@ee.es.osaka-u.ac.jp.
2
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. yuichifujita141@s.ee.es.osaka-u.ac.jp.
3
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. yamada@ee.es.osaka-u.ac.jp.
4
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. yamada@ee.es.osaka-u.ac.jp.
5
Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan. sawano@tcu.ac.jp.
6
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. hamaya@ee.es.osaka-u.ac.jp.
7
Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan. hamaya@ee.es.osaka-u.ac.jp.

Abstract

We study the influence of the junction size in ferromagnet (FM)/semiconductor (SC) contacts on four-terminal nonlocal spin signals in SC-based lateral spin-valve (LSV) structures. When we use FM/Ge Schottky-tunnel junctions with relatively low resistance-area products, the magnitude of the nonlocal spin signal depends clearly on the junction size, indicating the presence of the spin absorption effect at the spin-injector contact. The temperature-dependent spin signal can also be affected by the spin absorption effect. For SC spintronic applications with a low parasitic resistance, we should consider the influence of the spin absorption on the spin-transport signals in SC-based device structures.

KEYWORDS:

germanium; semiconductor spintronics; spin absorption

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