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Sensors (Basel). 2009;9(11):9122-32. doi: 10.3390/s91109122. Epub 2009 Nov 17.

Electrosprayed metal oxide semiconductor films for sensitive and selective detection of hydrogen sulfide.

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LASC Groupe Capteurs, ISEA, University Paul Verlaine-Metz, 7 rue Marconi, 57070 Metz, France; E-Mails: (M.L.); (M.S.).


Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO(2)), tungsten oxide (WO(3)) and indium oxide (In(2)O(3)) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM) shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD) proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H(2)S (10 ppm) at low operating temperatures (100 and 200 °C) and the best response in terms of R(air)/R(gas) is given by Cu-SnO(2) films (2500) followed by WO(3) (1200) and In(2)O(3) (75). Moreover, all the films exhibit no cross-sensitivity to other reducing (SO(2)) or oxidizing (NO(2)) gases.


electrostatic spray deposition; gas sensors; pollutant gases; semiconductor metal oxide

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