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Micromachines (Basel). 2018 Oct 25;9(11). pii: E546. doi: 10.3390/mi9110546.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.

Author information

1
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. wwojtas@ire.pw.edu.pl.
2
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. M.Goralczyk@ire.pw.edu.pl.
3
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. dgrygle@ire.pw.edu.pl.
4
Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. zajac@ammono.com.
5
Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. kucharski@ammono.com.
6
TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland. pawel.prystawko@unipress.waw.pl.
7
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. pawel.prystawko@unipress.waw.pl.
8
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. ania@ite.waw.pl.
9
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. ekielski@ite.waw.pl.
10
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. eliana@ite.waw.pl.
11
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. ataube@ite.waw.pl.
12
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland. mwzorek@ite.waw.pl.

Abstract

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

KEYWORDS:

AlGaN/GaN; ammonothermal GaN; high electron mobility transistor (HEMT); high electron mobility transistors; ohmic contact; power amplifier; regrown contact

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