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Items: 4

1.

External cavity type-I quantum well cascade diode lasers with a tuning range of 440  nm near 3  μm.

Wang M, Hosoda T, Jiang J, Shterengas L, Kipshidze G, Stein A, Feng T, Belenky G.

Opt Lett. 2018 Sep 15;43(18):4473-4476. doi: 10.1364/OL.43.004473.

PMID:
30211893
2.

Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap.

Suchalkin S, Belenky G, Ermolaev M, Moon S, Jiang Y, Graf D, Smirnov D, Laikhtman B, Shterengas L, Kipshidze G, Svensson SP, Sarney WL.

Nano Lett. 2018 Jan 10;18(1):412-417. doi: 10.1021/acs.nanolett.7b04304. Epub 2017 Dec 28.

PMID:
29266950
3.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm.

Feng T, Hosoda T, Shterengas L, Kipshidze G, Stein A, Lu M, Belenky G.

Appl Opt. 2017 Nov 1;56(31):H74-H80. doi: 10.1364/AO.56.000H74.

PMID:
29091669
4.

Materials design parameters for infrared device applications based on III-V semiconductors.

Svensson SP, Sarney WL, Donetsky D, Kipshidze G, Lin Y, Shterengas L, Xu Y, Belenky G.

Appl Opt. 2017 Jan 20;56(3):B58-B63. doi: 10.1364/AO.56.000B58.

PMID:
28157865

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