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Items: 19

1.

Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry-Perot filter.

Kim D, Han S, Jung J, Baek Y, Son J, Lee K, Heo J.

Opt Express. 2019 Dec 23;27(26):37446-37453. doi: 10.1364/OE.27.037446.

PMID:
31878524
2.

CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness.

Park J, Yoo G, Heo J.

Sci Rep. 2019 Feb 5;9(1):1411. doi: 10.1038/s41598-018-37902-y.

3.

Photoacoustic Energy Sensor for Nanosecond Optical Pulse Measurement.

Sang PG, Heo J, Park HJ, Baac HW.

Sensors (Basel). 2018 Nov 11;18(11). pii: E3879. doi: 10.3390/s18113879.

4.

Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors.

Park J, Park Y, Yoo G, Heo J.

Nanoscale Res Lett. 2017 Nov 21;12(1):599. doi: 10.1186/s11671-017-2368-2.

5.

Distinct mechanisms for the upconversion of NaYF4:Yb3+,Er3+ nanoparticles revealed by stimulated emission depletion.

Shin K, Jung T, Lee E, Lee G, Goh Y, Heo J, Jung M, Jo EJ, Lee H, Kim MG, Lee KT.

Phys Chem Chem Phys. 2017 Apr 12;19(15):9739-9744. doi: 10.1039/c7cp00918f.

PMID:
28367577
6.

Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters.

Yoo G, Choi SL, Park SJ, Lee KT, Lee S, Oh MS, Heo J, Park HJ.

Sci Rep. 2017 Jan 18;7:40945. doi: 10.1038/srep40945.

7.

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.

Moon S, Kim K, Kim Y, Heo J, Lee J.

Sci Rep. 2016 Jul 20;6:30107. doi: 10.1038/srep30107.

8.

Angle- and position-insensitive electrically tunable absorption in graphene by epsilon-near-zero effect.

Lee S, Tran TQ, Kim M, Heo H, Heo J, Kim S.

Opt Express. 2015 Dec 28;23(26):33350-8. doi: 10.1364/OE.23.033350.

PMID:
26831999
9.

InGaN/GaN nanowires grown on SiO(2) and light emitting diodes with low turn on voltages.

Park Y, Jahangir S, Park Y, Bhattacharya P, Heo J.

Opt Express. 2015 Jun 1;23(11):A650-6. doi: 10.1364/OE.23.00A650.

PMID:
26072889
10.

Solid state electrically injected exciton-polariton laser.

Bhattacharya P, Xiao B, Das A, Bhowmick S, Heo J.

Phys Rev Lett. 2013 May 17;110(20):206403. Epub 2013 May 15.

PMID:
25167434
11.

Room-temperature polariton lasing from GaN nanowire array clad by dielectric microcavity.

Heo J, Jahangir S, Xiao B, Bhattacharya P.

Nano Lett. 2013 Jun 12;13(6):2376-80. doi: 10.1021/nl400060j. Epub 2013 May 14.

PMID:
23634649
12.

Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire.

Deshpande S, Heo J, Das A, Bhattacharya P.

Nat Commun. 2013;4:1675. doi: 10.1038/ncomms2691.

PMID:
23575679
13.

Polariton Bose-Einstein condensate at room temperature in an Al(Ga)N nanowire-dielectric microcavity with a spatial potential trap.

Das A, Bhattacharya P, Heo J, Banerjee A, Guo W.

Proc Natl Acad Sci U S A. 2013 Feb 19;110(8):2735-40. doi: 10.1073/pnas.1210842110. Epub 2013 Feb 4.

14.

Room temperature strong coupling effects from single ZnO nanowire microcavity.

Das A, Heo J, Bayraktaroglu A, Guo W, Ng TK, Phillips J, Ooi BS, Bhattacharya P.

Opt Express. 2012 May 21;20(11):11830-7. doi: 10.1364/OE.20.011830.

PMID:
22714170
15.

Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon.

Heo J, Jiang Z, Xu J, Bhattacharya P.

Opt Express. 2011 Dec 19;19(27):26394-8. doi: 10.1364/OE.19.026394.

PMID:
22274223
16.

Spin relaxation in InGaN quantum disks in GaN nanowires.

Banerjee A, Doğan F, Heo J, Manchon A, Guo W, Bhattacharya P.

Nano Lett. 2011 Dec 14;11(12):5396-400. doi: 10.1021/nl203091f. Epub 2011 Nov 7.

PMID:
22049993
17.

Room temperature ultralow threshold GaN nanowire polariton laser.

Das A, Heo J, Jankowski M, Guo W, Zhang L, Deng H, Bhattacharya P.

Phys Rev Lett. 2011 Aug 5;107(6):066405. Epub 2011 Aug 4.

PMID:
21902349
18.

Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.

Guo W, Zhang M, Bhattacharya P, Heo J.

Nano Lett. 2011 Apr 13;11(4):1434-8. doi: 10.1021/nl103649d. Epub 2011 Mar 2.

PMID:
21366223
19.

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots.

Heo J, Zhu T, Zhang C, Xu J, Bhattacharya P.

Opt Lett. 2010 Feb 15;35(4):547-9. doi: 10.1364/OL.35.000547.

PMID:
20160813

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