Format
Sort by
Items per page

Send to

Choose Destination

Search results

Items: 1 to 20 of 61

1.

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

Liu X, Wu W, Chen W, Ning H, Zhang X, Yuan W, Xiong M, Wang X, Yao R, Peng J.

Materials (Basel). 2018 Aug 15;11(8). pii: E1440. doi: 10.3390/ma11081440.

2.

All-Solution-Processed Pure Formamidinium-Based Perovskite Light-Emitting Diodes.

Wang J, Song C, He Z, Mai C, Xie G, Mu L, Cun Y, Li J, Wang J, Peng J, Cao Y.

Adv Mater. 2018 Aug 12:e1804137. doi: 10.1002/adma.201804137. [Epub ahead of print]

PMID:
30101569
3.

Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping.

Li M, Zhang W, Chen W, Li M, Wu W, Xu H, Zou J, Tao H, Wang L, Xu M, Peng J.

ACS Appl Mater Interfaces. 2018 Aug 29;10(34):28764-28771. doi: 10.1021/acsami.8b07612. Epub 2018 Aug 16.

PMID:
30074382
4.

Critical Impact of Solvent Evaporation on the Resolution of Inkjet Printed Nanoparticles Film.

Tao R, Fang Z, Zhang J, Ning H, Chen J, Yang C, Zhou Y, Yao R, Lin W, Peng J.

ACS Appl Mater Interfaces. 2018 Jul 11;10(27):22883-22888. doi: 10.1021/acsami.8b06519. Epub 2018 Jun 26.

PMID:
29939008
5.

Fully Solution-Processed Tandem White Quantum-Dot Light-Emitting Diode with an External Quantum Efficiency Exceeding 25.

Jiang C, Zou J, Liu Y, Song C, He Z, Zhong Z, Wang J, Yip HL, Peng J, Cao Y.

ACS Nano. 2018 Jun 15. doi: 10.1021/acsnano.8b02289. [Epub ahead of print]

PMID:
29894158
6.

TFT-Directed Electroplating of RGB Luminescent Films without a Vacuum or Mask toward a Full-Color AMOLED Pixel Matrix.

Wang R, Zhang D, Xiong Y, Zhou X, Liu C, Chen W, Wu W, Zhou L, Xu M, Wang L, Liu L, Peng J, Ma Y, Cao Y.

ACS Appl Mater Interfaces. 2018 May 30;10(21):17519-17525. doi: 10.1021/acsami.8b04487. Epub 2018 May 18.

PMID:
29770685
7.

Morphology Modulation of Direct Inkjet Printing by Incorporating Polymers and Surfactants into a Sol-Gel Ink System.

Zhu Z, Ning H, Cai W, Wei J, Zhou S, Yao R, Lu X, Zhang J, Zhou Z, Peng J.

Langmuir. 2018 Jun 5;34(22):6413-6419. doi: 10.1021/acs.langmuir.8b00745. Epub 2018 May 24.

PMID:
29750535
8.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor.

He P, Jiang C, Lan L, Sun S, Li Y, Gao P, Zhang P, Dai X, Wang J, Peng J, Cao Y.

ACS Nano. 2018 May 22;12(5):4624-4629. doi: 10.1021/acsnano.8b01094. Epub 2018 May 11.

PMID:
29741872
9.

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon⁻Tin Oxide Thin-Film Transistors.

Liu X, Ning H, Chen W, Fang Z, Yao R, Wang X, Deng Y, Yuan W, Wu W, Peng J.

Nanomaterials (Basel). 2018 May 2;8(5). pii: E293. doi: 10.3390/nano8050293.

10.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Hu S, Ning H, Lu K, Fang Z, Li Y, Yao R, Xu M, Wang L, Peng J, Lu X.

Nanomaterials (Basel). 2018 Mar 27;8(4). pii: E197. doi: 10.3390/nano8040197.

11.

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

Chen W, Wu W, Zhou L, Xu M, Wang L, Ning H, Peng J.

Materials (Basel). 2018 Mar 11;11(3). pii: E416. doi: 10.3390/ma11030416.

12.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Liu X, Xu H, Ning H, Lu K, Zhang H, Zhang X, Yao R, Fang Z, Lu X, Peng J.

Sci Rep. 2018 Mar 7;8(1):4160. doi: 10.1038/s41598-018-22602-4.

13.

Highly Efficient All-Solution Processed Inverted Quantum Dots Based Light Emitting Diodes.

Liu Y, Jiang C, Song C, Wang J, Mu L, He Z, Zhong Z, Cun Y, Mai C, Wang J, Peng J, Cao Y.

ACS Nano. 2018 Feb 27;12(2):1564-1570. doi: 10.1021/acsnano.7b08129. Epub 2018 Jan 30.

PMID:
29365251
14.

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating.

Peng J, Wei J, Zhu Z, Ning H, Cai W, Lu K, Yao R, Tao H, Zheng Y, Lu X.

Nanomaterials (Basel). 2017 Nov 29;7(12). pii: E419. doi: 10.3390/nano7120419.

15.

Regioisomeric Non-Fullerene Acceptors Containing Fluorobenzo[c][1,2,5]thiadiazole Unit for Polymer Solar Cells.

Zhong W, Fan B, Cui J, Ying L, Liu F, Peng J, Huang F, Cao Y, Bazan GC.

ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37087-37093. doi: 10.1021/acsami.7b12902. Epub 2017 Oct 16.

PMID:
28985459
16.

UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity.

Ning H, Zhou Y, Fang Z, Yao R, Tao R, Chen J, Cai W, Zhu Z, Yang C, Wei J, Wang L, Peng J.

Nanoscale Res Lett. 2017 Sep 25;12(1):546. doi: 10.1186/s11671-017-2300-9.

17.

High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

Liu B, Nie H, Lin G, Hu S, Gao D, Zou J, Xu M, Wang L, Zhao Z, Ning H, Peng J, Cao Y, Tang BZ.

ACS Appl Mater Interfaces. 2017 Oct 4;9(39):34162-34171. doi: 10.1021/acsami.7b11422. Epub 2017 Sep 22.

PMID:
28880519
18.

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

Cai W, Zhu Z, Wei J, Fang Z, Ning H, Zheng Z, Zhou S, Yao R, Peng J, Lu X.

Materials (Basel). 2017 Aug 21;10(8). pii: E972. doi: 10.3390/ma10080972.

19.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Hu S, Fang Z, Ning H, Tao R, Liu X, Zeng Y, Yao R, Huang F, Li Z, Xu M, Wang L, Lan L, Peng J.

Materials (Basel). 2016 Jul 27;9(8). pii: E623. doi: 10.3390/ma9080623.

20.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature.

Yao R, Zheng Z, Zeng Y, Liu X, Ning H, Hu S, Tao R, Chen J, Cai W, Xu M, Wang L, Lan L, Peng J.

Materials (Basel). 2017 Feb 23;10(3). pii: E222. doi: 10.3390/ma10030222.

Supplemental Content

Loading ...
Support Center