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Items: 9

1.

On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits.

Cisternas Ferri A, Rapoport A, Fierens PI, Patterson GA, Miranda E, Suñé J.

Materials (Basel). 2019 Jul 13;12(14). pii: E2260. doi: 10.3390/ma12142260.

2.

Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films.

Palau A, Fernandez-Rodriguez A, Gonzalez-Rosillo JC, Granados X, Coll M, Bozzo B, Ortega-Hernandez R, Suñé J, Mestres N, Obradors X, Puig T.

ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30522-30531. doi: 10.1021/acsami.8b08042. Epub 2018 Aug 28.

3.

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator.

Li Y, Zhang M, Long S, Teng J, Liu Q, Lv H, Miranda E, Suñé J, Liu M.

Sci Rep. 2017 Sep 11;7(1):11204. doi: 10.1038/s41598-017-11165-5.

4.

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device.

Zhang M, Long S, Li Y, Liu Q, Lv H, Miranda E, Suñé J, Liu M.

Nanoscale Res Lett. 2016 Dec;11(1):269. doi: 10.1186/s11671-016-1484-8. Epub 2016 May 25.

5.

Conductance Quantization in Resistive Random Access Memory.

Li Y, Long S, Liu Y, Hu C, Teng J, Liu Q, Lv H, Suñé J, Liu M.

Nanoscale Res Lett. 2015 Dec;10(1):420. doi: 10.1186/s11671-015-1118-6. Epub 2015 Oct 26.

6.

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Zhang M, Long S, Wang G, Liu R, Xu X, Li Y, Xu D, Liu Q, Lv H, Miranda E, Suñé J, Liu M.

Nanoscale Res Lett. 2014 Dec;9(1):2500. doi: 10.1186/1556-276X-9-694. Epub 2014 Dec 23.

7.

Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.

Calka P, Sowinska M, Bertaud T, Walczyk D, Dabrowski J, Zaumseil P, Walczyk C, Gloskovskii A, Cartoixà X, Suñé J, Schroeder T.

ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5056-60. doi: 10.1021/am500137y. Epub 2014 Mar 21.

PMID:
24625458
8.

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M, Suñé J.

Sci Rep. 2013 Oct 14;3:2929. doi: 10.1038/srep02929.

9.

Modeling transport in ultrathin Si nanowires: charged versus neutral impurities.

Rurali R, Markussen T, Suñé J, Brandbyge M, Jauho AP.

Nano Lett. 2008 Sep;8(9):2825-8. doi: 10.1021/nl801409m. Epub 2008 Aug 2.

PMID:
18672945

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