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Items: 1 to 20 of 36

1.

P-N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices.

Kim DK, Hong SB, Jeong K, Lee C, Kim H, Cho MH.

ACS Nano. 2019 Feb 26;13(2):1683-1693. doi: 10.1021/acsnano.8b07730. Epub 2019 Feb 14.

PMID:
30753059
2.

Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement.

Kim SH, Kim GS, Park J, Lee C, Kim H, Kim J, Shim JH, Yu HY.

ACS Appl Mater Interfaces. 2018 Aug 8;10(31):26378-26386. doi: 10.1021/acsami.8b07066. Epub 2018 Jul 24.

PMID:
30003786
3.

New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam Irradiation.

Cho Y, Ji H, Kim H, Yoon J, Choi B.

J Nanosci Nanotechnol. 2018 Sep 1;18(9):5996-6000. doi: 10.1166/jnn.2018.15594.

PMID:
29677731
4.

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition.

Baik M, Kang HK, Kang YS, Jeong KS, An Y, Choi S, Kim H, Song JD, Cho MH.

Sci Rep. 2017 Sep 12;7(1):11337. doi: 10.1038/s41598-017-09623-1.

5.

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics.

Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H.

Sci Rep. 2017 Aug 29;7(1):9769. doi: 10.1038/s41598-017-09888-6.

6.

Carrier-Type Modulation and Mobility Improvement of Thin MoTe2.

Qu D, Liu X, Huang M, Lee C, Ahmed F, Kim H, Ruoff RS, Hone J, Yoo WJ.

Adv Mater. 2017 Oct;29(39). doi: 10.1002/adma.201606433. Epub 2017 Aug 28.

PMID:
28845903
7.

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

Kang HK, Kang YS, Kim DK, Baik M, Song JD, An Y, Kim H, Cho MH.

ACS Appl Mater Interfaces. 2017 May 24;9(20):17526-17535. doi: 10.1021/acsami.7b00099. Epub 2017 May 15.

PMID:
28387121
8.

Evenly transferred single-layered graphene membrane assisted by strong substrate adhesion.

Park S, Kim H, Seol D, Park T, Leem M, Ha H, An H, You Kim H, Jeong SJ, Park S, Kim H, Kim Y.

Nanotechnology. 2017 Apr 7;28(14):145706. doi: 10.1088/1361-6528/aa6053.

PMID:
28287075
9.

Ultrasensitive Room-Temperature Operable Gas Sensors Using p-Type Na:ZnO Nanoflowers for Diabetes Detection.

Jaisutti R, Lee M, Kim J, Choi S, Ha TJ, Kim J, Kim H, Park SK, Kim YH.

ACS Appl Mater Interfaces. 2017 Mar 15;9(10):8796-8804. doi: 10.1021/acsami.7b00673. Epub 2017 Mar 1.

PMID:
28224789
10.

Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al2O3: Thermal, Ambient, and Mechanical Stabilities.

Hwang B, An Y, Lee H, Lee E, Becker S, Kim YH, Kim H.

Sci Rep. 2017 Jan 27;7:41336. doi: 10.1038/srep41336.

11.

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

Kim J, Choi S, Park T, Kim J, Kim C, Cha T, Lee H, Lee E, Won JY, Lee HI, Hyun S, Kim S, Shin D, Kim Y, Kwon K, Kim H.

ACS Appl Mater Interfaces. 2017 Jan 11;9(1):566-572. doi: 10.1021/acsami.6b12968. Epub 2016 Dec 29.

PMID:
27977917
12.

Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with benzenethiol.

Kim D, Fu Y, Kim J, Lee KH, Kim H, Yang H, Chae H.

Nanotechnology. 2016 Jun 17;27(24):245203. doi: 10.1088/0957-4484/27/24/245203. Epub 2016 May 9.

PMID:
27159925
13.

Trap-induced photoresponse of solution-synthesized MoS2.

Lee Y, Yang J, Lee D, Kim YH, Park JH, Kim H, Cho JH.

Nanoscale. 2016 Apr 28;8(17):9193-200. doi: 10.1039/c6nr00654j.

PMID:
27075554
14.

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity.

Yang J, Kwak H, Lee Y, Kang YS, Cho MH, Cho JH, Kim YH, Jeong SJ, Park S, Lee HJ, Kim H.

ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8576-82. doi: 10.1021/acsami.5b11709. Epub 2016 Mar 28.

PMID:
26989951
15.

Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability.

Kang YS, Kang HK, Kim DK, Jeong KS, Baik M, An Y, Kim H, Song JD, Cho MH.

ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7489-98. doi: 10.1021/acsami.5b10975. Epub 2016 Mar 9.

PMID:
26928131
16.

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S.

Sci Rep. 2016 Feb 10;6:20907. doi: 10.1038/srep20907.

17.
18.

Wafer-scale synthesis of thickness-controllable MoS2 films via solution-processing using a dimethylformamide/n-butylamine/2-aminoethanol solvent system.

Yang J, Gu Y, Lee E, Lee H, Park SH, Cho MH, Kim YH, Kim YH, Kim H.

Nanoscale. 2015 May 28;7(20):9311-9. doi: 10.1039/c5nr01486g.

PMID:
25946575
19.

Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.

Byun YC, Choi S, An Y, McIntyre PC, Kim H.

ACS Appl Mater Interfaces. 2015 Apr 8;7(13):7445. doi: 10.1021/acsami.5b02372. Epub 2015 Mar 30. No abstract available.

PMID:
25823007
20.

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

Choi J, Choi S, Kang YS, Na S, Lee HJ, Cho MH, Kim H.

ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14712-7. doi: 10.1021/am503626g. Epub 2014 Aug 14.

PMID:
25093916

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