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Sensors (Basel). 2018 Aug 6;18(8). pii: E2569. doi: 10.3390/s18082569.

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS.

Author information

1
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea. vietbk10@dongguk.edu.
2
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea. kahn0217@dongguk.edu.
3
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea. youngjoechoe@dongguk.edu.
4
Yongin Research Institute, Hanwha Systems, Gyeonggi-do 17121, Korea. bokhyung1228.lee@hanwha.com.
5
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea. jdpark@dongguk.edu.

Abstract

We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.625° as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4° and an RMS amplitude error of less than 0.93 dB at 9⁻11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm² of the chip area and consumes 170 mW of DC power.

KEYWORDS:

T/R module; attenuator; bi-directional gain amplifier; phase shifter; phased array antenna; radar-based sensors

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