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Items: 1 to 20 of 29

1.

Polymer-Doped Ink System for Threshold Voltage Modulation in Printed Metal Oxide Thin Film Transistors.

Zhu Z, Zhang J, Wang Y, Ning H, Guo D, Cai W, Zhou S, Liang Z, Yao R, Peng J.

J Phys Chem Lett. 2019 Jun 7:3415-3419. doi: 10.1021/acs.jpclett.9b01206. [Epub ahead of print]

PMID:
31181931
2.

Investigation of direct inkjet-printed versus spin-coated ZrO2 for sputter IGZO thin film transistor.

Cai W, Ning H, Zhu Z, Wei J, Zhou S, Yao R, Fang Z, Huang X, Lu X, Peng J.

Nanoscale Res Lett. 2019 Mar 5;14(1):80. doi: 10.1186/s11671-019-2905-2.

3.

Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.

Xu H, Xu M, Li M, Chen Z, Zou J, Wu W, Qiao X, Tao H, Wang L, Ning H, Ma D, Peng J.

ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5232-5239. doi: 10.1021/acsami.8b18329. Epub 2019 Jan 25.

PMID:
30640426
4.

A Simple, Low Cost Ink System for Drop-on-Demand Printing High Performance Metal Oxide Dielectric Film at Low Temperature.

Zhu Z, Zhang J, Zhou Z, Ning H, Cai W, Wei J, Zhou S, Yao R, Lu X, Peng J.

ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5193-5199. doi: 10.1021/acsami.8b14328. Epub 2019 Jan 25.

PMID:
30624890
5.

Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs.

Zhang H, Li X, Fang Z, Yao R, Zhang X, Deng Y, Lu X, Tao H, Ning H, Peng J.

Materials (Basel). 2018 Dec 6;11(12). pii: E2480. doi: 10.3390/ma11122480.

6.

Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films.

Zhang G, Lu K, Zhang X, Yuan W, Shi M, Ning H, Tao R, Liu X, Yao R, Peng J.

Micromachines (Basel). 2018 Jul 30;9(8). pii: E377. doi: 10.3390/mi9080377.

7.

Capillary force induced air film for self-aligned short channel: pushing the limits of inkjet printing.

Tao R, Fang Z, Zhang J, Ning H, Chen J, Yang C, Zhou Y, Yao R, Song Y, Peng J.

Soft Matter. 2018 Nov 28;14(46):9402-9410. doi: 10.1039/c8sm01984c.

PMID:
30421779
8.

Zigzag Hollow Cracks of Silver Nanoparticle Film Regulated by Its Drying Micro-environment.

Tao R, Zhang J, Fang Z, Ning H, Chen J, Yang C, Zhou Y, Yao R, Song Y, Peng J.

Nanoscale Res Lett. 2018 Nov 6;13(1):354. doi: 10.1186/s11671-018-2777-x.

9.

High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al₂O₃ Nanolaminate Structure Processed at Room Temperature.

Yao R, Li X, Zheng Z, Zhang X, Xiong M, Xiao S, Ning H, Wang X, Wu Y, Peng J.

Materials (Basel). 2018 Oct 1;11(10). pii: E1871. doi: 10.3390/ma11101871.

10.

Enhancement of Electrical Characteristics and Stability of Amorphous Si-Sn-O Thin Film Transistors with SiOx Passivation Layer.

Liu X, Wu W, Chen W, Ning H, Zhang X, Yuan W, Xiong M, Wang X, Yao R, Peng J.

Materials (Basel). 2018 Aug 15;11(8). pii: E1440. doi: 10.3390/ma11081440.

11.

Critical Impact of Solvent Evaporation on the Resolution of Inkjet Printed Nanoparticles Film.

Tao R, Fang Z, Zhang J, Ning H, Chen J, Yang C, Zhou Y, Yao R, Lin W, Peng J.

ACS Appl Mater Interfaces. 2018 Jul 11;10(27):22883-22888. doi: 10.1021/acsami.8b06519. Epub 2018 Jun 26.

PMID:
29939008
12.

Morphology Modulation of Direct Inkjet Printing by Incorporating Polymers and Surfactants into a Sol-Gel Ink System.

Zhu Z, Ning H, Cai W, Wei J, Zhou S, Yao R, Lu X, Zhang J, Zhou Z, Peng J.

Langmuir. 2018 Jun 5;34(22):6413-6419. doi: 10.1021/acs.langmuir.8b00745. Epub 2018 May 24.

PMID:
29750535
13.

Effect of Source/Drain Electrodes on the Electrical Properties of Silicon⁻Tin Oxide Thin-Film Transistors.

Liu X, Ning H, Chen W, Fang Z, Yao R, Wang X, Deng Y, Yuan W, Wu W, Peng J.

Nanomaterials (Basel). 2018 May 2;8(5). pii: E293. doi: 10.3390/nano8050293.

14.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Hu S, Ning H, Lu K, Fang Z, Li Y, Yao R, Xu M, Wang L, Peng J, Lu X.

Nanomaterials (Basel). 2018 Mar 27;8(4). pii: E197. doi: 10.3390/nano8040197.

15.

A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors.

Chen W, Wu W, Zhou L, Xu M, Wang L, Ning H, Peng J.

Materials (Basel). 2018 Mar 11;11(3). pii: E416. doi: 10.3390/ma11030416.

16.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Liu X, Xu H, Ning H, Lu K, Zhang H, Zhang X, Yao R, Fang Z, Lu X, Peng J.

Sci Rep. 2018 Mar 7;8(1):4160. doi: 10.1038/s41598-018-22602-4.

17.

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating.

Peng J, Wei J, Zhu Z, Ning H, Cai W, Lu K, Yao R, Tao H, Zheng Y, Lu X.

Nanomaterials (Basel). 2017 Nov 29;7(12). pii: E419. doi: 10.3390/nano7120419.

18.

UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity.

Ning H, Zhou Y, Fang Z, Yao R, Tao R, Chen J, Cai W, Zhu Z, Yang C, Wei J, Wang L, Peng J.

Nanoscale Res Lett. 2017 Sep 25;12(1):546. doi: 10.1186/s11671-017-2300-9.

19.

High-Performance Doping-Free Hybrid White OLEDs Based on Blue Aggregation-Induced Emission Luminogens.

Liu B, Nie H, Lin G, Hu S, Gao D, Zou J, Xu M, Wang L, Zhao Z, Ning H, Peng J, Cao Y, Tang BZ.

ACS Appl Mater Interfaces. 2017 Oct 4;9(39):34162-34171. doi: 10.1021/acsami.7b11422. Epub 2017 Sep 22.

PMID:
28880519
20.

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO₂ Gate Insulator TFT with a High Concentration Precursor.

Cai W, Zhu Z, Wei J, Fang Z, Ning H, Zheng Z, Zhou S, Yao R, Peng J, Lu X.

Materials (Basel). 2017 Aug 21;10(8). pii: E972. doi: 10.3390/ma10080972.

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