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Nanomaterials (Basel). 2019 May 1;9(5). pii: E676. doi: 10.3390/nano9050676.

Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation.

Author information

1
Integrated Centre for Environmental Science Studies in the North-East Development Region-CERNESIM, "Al. I. Cuza" University of Iasi, 700506 Iasi, Romania. georgiana.bulai@uaic.ro.
2
Université de Lille, CNRS, UMR 8523-PhLAM-Physique des Lasers, Atomes et Molécules, CERLA-Centre d'Etudes et de Recherches Lasers et Applications, Lille F-59000, France. oana.pompilian@inflpr.ro.
3
National Institute for Lasers, Plasma and Radiation Physics, RO-077125 Magurele-Bucharest, Romania. oana.pompilian@inflpr.ro.
4
Faculty of Physics, "Al. I. Cuza" University of Iasi, 700506 Iasi, Romania. sgurlui@uaic.ro.
5
Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice, Czech Republic. Petr.Nemec@upce.cz.
6
Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice, Czech Republic. virginie.nazabal@univ-rennes1.fr.
7
Université de Rennes 1, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)⁻UMR 6226, F-35000 Rennes, France. virginie.nazabal@univ-rennes1.fr.
8
Faculty of Materials Science and Engineering, "Gheorghe Asachi" Technical University of Iasi, 700050 Iasi, Romania. nicanor.cimpoesu@tuiasi.ro.
9
Université de Lille, CNRS, UMR 8523-PhLAM-Physique des Lasers, Atomes et Molécules, CERLA-Centre d'Etudes et de Recherches Lasers et Applications, Lille F-59000, France. bertrand.chazallon@univ-lille.fr.
10
Université de Lille, CNRS, UMR 8523-PhLAM-Physique des Lasers, Atomes et Molécules, CERLA-Centre d'Etudes et de Recherches Lasers et Applications, Lille F-59000, France. cristian.focsa@univ-lille.fr.

Abstract

Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results showed that the films deposited by ns-PLD revealed droplets on the surface together with a decreased Te concentration and Sb over-stoichiometry. Thin films with improved surface roughness and chemical compositions close to nominal values were deposited by ps- and fs-PLD. The X-ray diffraction and Raman spectroscopy results showed that the samples obtained with ns pulses were partially crystallized while the lower fluences used in ps- and fs-PLD led to amorphous depositions. The optical parameters of the ns-PLD samples were correlated to their structural properties.

KEYWORDS:

Raman spectroscopy; chalcogenide thin films; pulsed laser deposition; spectroscopic ellipsometry

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