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Micromachines (Basel). 2018 Aug 10;9(8). pii: E396. doi: 10.3390/mi9080396.

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.

Author information

1
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. lijunfeng_EE@163.com.
2
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. maoshuman@163.com.
3
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. yuehangxu@uestc.edu.cn.
4
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. zhaoxiaodong@std.uestc.edu.cn.
5
Nanjing Electronic Devices Institute, Nanjing 210016, China. bobommic@163.com.
6
Nanjing Electronic Devices Institute, Nanjing 210016, China. fjiguo@163.com.
7
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. a2277462594@163.com.
8
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. yqwu@uestc.edu.cn.
9
Nanjing Electronic Devices Institute, Nanjing 210016, China. binzhang_cetc55@aliyun.com.
10
Nanjing Electronic Devices Institute, Nanjing 210016, China. chentsh@vip.sina.com.
11
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. yanbo@ee.uestc.edu.cn.
12
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. rmxu@uestc.edu.cn.
13
School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China. yrli@uestc.edu.cn.

Abstract

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.

KEYWORDS:

AlGaN/GaN HEMT; DIBL effect; W band; channel length modulation; power amplifier

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