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Items: 17


Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.

Spera M, Greco G, Corso D, Di Franco S, Severino A, Messina AA, Giannazzo F, Roccaforte F.

Materials (Basel). 2019 Oct 23;12(21). pii: E3468. doi: 10.3390/ma12213468.


An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.

Roccaforte F, Greco G, Fiorenza P, Iucolano F.

Materials (Basel). 2019 May 15;12(10). pii: E1599. doi: 10.3390/ma12101599. Review.


Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis.

Fiorenza P, Iucolano F, Nicotra G, Bongiorno C, Deretzis I, La Magna A, Giannazzo F, Saggio M, Spinella C, Roccaforte F.

Nanotechnology. 2018 Sep 28;29(39):395702. doi: 10.1088/1361-6528/aad129. Epub 2018 Jul 4.


Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.

Greco G, Fiorenza P, Iucolano F, Severino A, Giannazzo F, Roccaforte F.

ACS Appl Mater Interfaces. 2017 Oct 11;9(40):35383-35390. doi: 10.1021/acsami.7b08935. Epub 2017 Sep 26.


Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization.

Giannazzo F, Fisichella G, Greco G, Di Franco S, Deretzis I, La Magna A, Bongiorno C, Nicotra G, Spinella C, Scopelliti M, Pignataro B, Agnello S, Roccaforte F.

ACS Appl Mater Interfaces. 2017 Jul 12;9(27):23164-23174. doi: 10.1021/acsami.7b04919. Epub 2017 Jun 26.


Advances in the fabrication of graphene transistors on flexible substrates.

Fisichella G, Lo Verso S, Di Marco S, Vinciguerra V, Schilirò E, Di Franco S, Lo Nigro R, Roccaforte F, Zurutuza A, Centeno A, Ravesi S, Giannazzo F.

Beilstein J Nanotechnol. 2017 Feb 20;8:467-474. doi: 10.3762/bjnano.8.50. eCollection 2017.


In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere.

Piazza A, Giannazzo F, Buscarino G, Fisichella G, Magna A, Roccaforte F, Cannas M, Gelardi FM, Agnello S.

Beilstein J Nanotechnol. 2017 Feb 10;8:418-424. doi: 10.3762/bjnano.8.44. eCollection 2017.


Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures.

Giannazzo F, Fisichella G, Piazza A, Di Franco S, Greco G, Agnello S, Roccaforte F.

Beilstein J Nanotechnol. 2017 Jan 25;8:254-263. doi: 10.3762/bjnano.8.28. eCollection 2017.


Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.

Fisichella G, Schilirò E, Di Franco S, Fiorenza P, Lo Nigro R, Roccaforte F, Ravesi S, Giannazzo F.

ACS Appl Mater Interfaces. 2017 Mar 1;9(8):7761-7771. doi: 10.1021/acsami.6b15190. Epub 2017 Feb 13.


Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces.

Fiorenza P, Di Franco S, Giannazzo F, Roccaforte F.

Nanotechnology. 2016 Aug 5;27(31):315701. doi: 10.1088/0957-4484/27/31/315701. Epub 2016 Jun 21.


Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

Fisichella G, Greco G, Roccaforte F, Giannazzo F.

Nanoscale. 2014 Aug 7;6(15):8671-80. doi: 10.1039/c4nr01150c.


Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures.

Greco G, Fiorenza P, Giannazzo F, Alberti A, Roccaforte F.

Nanotechnology. 2014 Jan 17;25(2):025201. doi: 10.1088/0957-4484/25/2/025201. Epub 2013 Dec 12.


A look underneath the SiO2/4H-SiC interface after N2O thermal treatments.

Fiorenza P, Giannazzo F, Swanson LK, Frazzetto A, Lorenti S, Alessandrino MS, Roccaforte F.

Beilstein J Nanotechnol. 2013 Apr 8;4:249-54. doi: 10.3762/bjnano.4.26. Print 2013.


Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates.

Fisichella G, Di Franco S, Fiorenza P, Lo Nigro R, Roccaforte F, Tudisco C, Condorelli GG, Piluso N, Spartà N, Lo Verso S, Accardi C, Tringali C, Ravesi S, Giannazzo F.

Beilstein J Nanotechnol. 2013 Apr 2;4:234-42. doi: 10.3762/bjnano.4.24. Print 2013.


Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC.

Frazzetto A, Giannazzo F, Lo Nigro R, Di Franco S, Bongiorno C, Saggio M, Zanetti E, Raineri V, Roccaforte F.

Nanoscale Res Lett. 2011 Feb 21;6(1):158. doi: 10.1186/1556-276X-6-158.


Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization.

Greco G, Giannazzo F, Frazzetto A, Raineri V, Roccaforte F.

Nanoscale Res Lett. 2011 Feb 11;6(1):132. doi: 10.1186/1556-276X-6-132.


Nanoscale characterization of electrical transport at metal/3C-SiC interfaces.

Eriksson J, Roccaforte F, Reshanov S, Leone S, Giannazzo F, Lonigro R, Fiorenza P, Raineri V.

Nanoscale Res Lett. 2011 Feb 7;6(1):120. doi: 10.1186/1556-276X-6-120.

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