Format
Sort by
Items per page

Send to

Choose Destination

Search results

Items: 1 to 20 of 69

1.

Small footprint transistor architecture for photoswitching logic and in situ memory.

Liu C, Chen H, Hou X, Zhang H, Han J, Jiang YG, Zeng X, Zhang DW, Zhou P.

Nat Nanotechnol. 2019 May 27. doi: 10.1038/s41565-019-0462-6. [Epub ahead of print]

PMID:
31133664
2.

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity.

Wang TY, Meng JL, He ZY, Chen L, Zhu H, Sun QQ, Ding SJ, Zhang DW.

Nanoscale Res Lett. 2019 Mar 15;14(1):102. doi: 10.1186/s11671-019-2933-y.

3.

Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor.

Zhu B, Ding ZJ, Wu X, Liu WJ, Zhang DW, Ding SJ.

Nanoscale Res Lett. 2019 Mar 4;14(1):76. doi: 10.1186/s11671-019-2913-2.

4.

Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing.

Zhu B, Wu X, Liu WJ, Ding SJ, Zhang DW, Fan Z.

Nanoscale Res Lett. 2019 Feb 11;14(1):53. doi: 10.1186/s11671-019-2874-5.

5.

Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications.

He ZY, Wang TY, Chen L, Zhu H, Sun QQ, Ding SJ, Zhang DW.

Nanoscale Res Lett. 2019 Feb 7;14(1):51. doi: 10.1186/s11671-019-2875-4.

6.

Symmetric Ultrafast Writing and Erasing Speeds in Quasi-Nonvolatile Memory via van der Waals Heterostructures.

Li J, Liu L, Chen X, Liu C, Wang J, Hu W, Zhang DW, Zhou P.

Adv Mater. 2019 Mar;31(11):e1808035. doi: 10.1002/adma.201808035. Epub 2019 Jan 28.

PMID:
30687966
7.

Wafer-scale transferred multilayer MoS2 for high performance field effect transistors.

Zhang S, Xu H, Liao F, Sun Y, Ba K, Sun Z, Qiu ZJ, Xu Z, Zhu H, Chen L, Sun Q, Zhou P, Bao W, Zhang DW.

Nanotechnology. 2019 Apr 26;30(17):174002. doi: 10.1088/1361-6528/aafe24. Epub 2019 Jan 14.

PMID:
30641493
8.

Tubular 3D Resistive Random Access Memory Based on Rolled-Up h-BN Tube.

Hou X, Pan R, Yu Q, Zhang K, Huang G, Mei Y, Zhang DW, Zhou P.

Small. 2019 Feb;15(5):e1803876. doi: 10.1002/smll.201803876. Epub 2019 Jan 9.

PMID:
30624032
9.

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ([Formula: see text]) Heterojunctions.

Sun SM, Liu WJ, Xiao YF, Huan YW, Liu H, Ding SJ, Zhang DW.

Nanoscale Res Lett. 2018 Dec 24;13(1):412. doi: 10.1186/s11671-018-2832-7.

10.

Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

Ma HP, Lu HL, Yang JH, Li XX, Wang T, Huang W, Yuan GJ, Komarov FF, Zhang DW.

Nanomaterials (Basel). 2018 Dec 5;8(12). pii: E1008. doi: 10.3390/nano8121008.

11.

High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In2O3 Films.

Zhu B, Wu X, Liu WJ, Lu HL, Zhang DW, Fan Z, Ding SJ.

ACS Appl Mater Interfaces. 2019 Jan 9;11(1):747-752. doi: 10.1021/acsami.8b17093. Epub 2018 Dec 21.

PMID:
30525419
12.

A MoS2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility.

Wang S, Chen C, Yu Z, He Y, Chen X, Wan Q, Shi Y, Zhang DW, Zhou H, Wang X, Zhou P.

Adv Mater. 2019 Jan;31(3):e1806227. doi: 10.1002/adma.201806227. Epub 2018 Nov 28.

PMID:
30485567
13.

An Organic Flexible Artificial Bio-Synapses with Long-Term Plasticity for Neuromorphic Computing.

Wang TY, He ZY, Chen L, Zhu H, Sun QQ, Ding SJ, Zhou P, Zhang DW.

Micromachines (Basel). 2018 May 15;9(5). pii: E239. doi: 10.3390/mi9050239.

14.

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application.

Xu H, Zhang H, Guo Z, Shan Y, Wu S, Wang J, Hu W, Liu H, Sun Z, Luo C, Wu X, Xu Z, Zhang DW, Bao W, Zhou P.

Small. 2018 Nov;14(48):e1803465. doi: 10.1002/smll.201803465. Epub 2018 Oct 16.

PMID:
30328296
15.

Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States.

Wang TY, He ZY, Liu H, Chen L, Zhu H, Sun QQ, Ding SJ, Zhou P, Zhang DW.

ACS Appl Mater Interfaces. 2018 Oct 31;10(43):37345-37352. doi: 10.1021/acsami.8b16841. Epub 2018 Oct 16.

PMID:
30284443
16.

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture.

Guo Z, Chen Y, Zhang H, Wang J, Hu W, Ding S, Zhang DW, Zhou P, Bao W.

Adv Sci (Weinh). 2018 Aug 2;5(9):1800237. doi: 10.1002/advs.201800237. eCollection 2018 Sep.

17.

Recent Advances in β-Ga2O3-Metal Contacts.

Huan YW, Sun SM, Gu CJ, Liu WJ, Ding SJ, Yu HY, Xia CT, Zhang DW.

Nanoscale Res Lett. 2018 Aug 22;13(1):246. doi: 10.1186/s11671-018-2667-2. Review.

18.

Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications.

Chen L, Wang TY, Dai YW, Cha MY, Zhu H, Sun QQ, Ding SJ, Zhou P, Chua L, Zhang DW.

Nanoscale. 2018 Aug 23;10(33):15826-15833. doi: 10.1039/c8nr04734k.

PMID:
30105324
19.

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P.

Adv Sci (Weinh). 2018 Jan 15;5(4):1700830. doi: 10.1002/advs.201700830. eCollection 2018 Apr.

20.

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure.

Hou X, Zhang H, Liu C, Ding S, Bao W, Zhang DW, Zhou P.

Small. 2018 May;14(20):e1800319. doi: 10.1002/smll.201800319. Epub 2018 Apr 17.

PMID:
29665261

Supplemental Content

Loading ...
Support Center