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Nanotechnology. 2019 Jan 11;30(2):025202. doi: 10.1088/1361-6528/aae6db. Epub 2018 Nov 1.

Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy.

Author information

1
Aix Marseille Université, Université de Toulon, CNRS, IM2NP, UMR 7334, Av. Escadrille Normandie Niemen, F-13397 Marseille, France.

Abstract

We report on the fabrication of memory devices based on a nanoporous GeSbTe layer electrodeposited inbetween TiN and Ag electrodes. It is shown that devices can operate along two distinct electrical modes consisting of a volatile or a non-volatile resistance switching mode upon appropriate preconditioning procedures. Based on electrical measurements conducted in both switching modes and physical analysis performed on a device after electrical stress, resistance switching is attributed to the formation/dissolution of a conductive filament from the Ag electrode into the GST layer whereas the volatile/non-volatile resistance switching is attributed to the presence of an interface layer between the GST and the Ag top electrode. Due to their simple, low-cost and low-temperature fabrication procedure, these devices could be advantageously exploited in flexible electronic applications or embedded into the back-end of line CMOS technology.

PMID:
30382029
DOI:
10.1088/1361-6528/aae6db

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