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Microscopy (Oxf). 2015 Oct;64(5):335-40. doi: 10.1093/jmicro/dfv032. Epub 2015 Jun 26.

Crack tip shielding observed with high-resolution transmission electron microscopy.

Author information

1
Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan.
2
Department of Materials Science and Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan masaki@zaiko.kyushu-u.ac.jp.
3
Department of Hydrogen Energy Systems, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan.

Abstract

The dislocation shielding field at a crack tip was experimentally proven at the atomic scale by measuring the local strain in front of the crack tip using high-resolution transmission electron microscopy (HRTEM) and geometric phase analysis (GPA). Single crystalline (110) silicon wafers were employed. Cracks were introduced using a Vickers indenter at room temperature. The crack tip region was observed using HRTEM followed by strain measurements using GPA. The measured strain field at the crack tip was compressive owing to dislocation shielding, which is in good agreement with the strain field calculated from elastic theory.

KEYWORDS:

HRTEM; brittle-to-ductile transition; dislocation shielding effect; fracture toughness; geometric phase analysis

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