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Materials (Basel). 2018 Mar 28;11(4). pii: E512. doi: 10.3390/ma11040512.

Graphene Quantum Dots-ZnS Nanocomposites with Improved Photoelectric Performances.

Author information

1
School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China. 219915@whut.edu.cn.
2
School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China. fcy1255411153@163.com.
3
School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China. 15927301445@163.com.
4
School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China. leiyun@whut.edu.cn.

Abstract

ZnS-graphene quantum dot (GQDs) composites were synthesized by a simple solvothermal method, in which GQDs were prepared by a hydrothermal cutting process. The products were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction and ultraviolet-visible absorption spectroscopy. The results show that GQDs were obtained by size tailoring of 1-4 graphene layers and combined with cubic ZnS nanoparticles to form ZnS-GQDs composites. The photocurrent and electrochemical behavior of the products were evaluated by transient photocurrent responses and electrochemical impedance spectra. The photocurrent density of ZnS-GQDs achieves the value of 2.32 × 10-5 A/cm², which is 2.4-times as high as that of ZnS-graphene. GQDs serve as an electrical conducting material, which decreases the conductive path and accelerates the electron transfer. The charge-transfer resistance of ZnS-GQDs is much lower than that of ZnS-graphene and pure ZnS due to the effective electron separation and transfer ability upon the incorporation of GQDs.

KEYWORDS:

GQDs; ZnS-GQDs composites; electrochemical impedance spectra; photocurrent responses

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