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Items: 6


Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field.

Baira M, Salem B, Ahamad Madhar N, Ilahi B.

Micromachines (Basel). 2019 Apr 12;10(4). pii: E243. doi: 10.3390/mi10040243.


Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots.

Baira M, Salem B, Madhar NA, Ilahi B.

Nanomaterials (Basel). 2019 Jan 19;9(1). pii: E124. doi: 10.3390/nano9010124.


Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

Al-Saigh R, Baira M, Salem B, Ilahi B.

Nanoscale Res Lett. 2018 Jun 7;13(1):172. doi: 10.1186/s11671-018-2587-1.


Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.

Ilahi B, Zribi J, Guillotte M, Arès R, Aimez V, Morris D.

Materials (Basel). 2016 Jun 24;9(7). pii: E511. doi: 10.3390/ma9070511.


Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.

Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B.

Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699.


Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate.

Azeza B, Hadj Alouane MH, Ilahi B, Patriarche G, Sfaxi L, Fouzri A, Maaref H, M'ghaieth R.

Materials (Basel). 2015 Jul 22;8(7):4544-4552. doi: 10.3390/ma8074544.

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